2019中心學術成果發表

2019期刊論文發表 54篇如下:

  1. Ramesh Kumar Kakkerla, Deepak Anandan, Sankalp Kumar Singh, Hung Wei Yu, Ching-Ting Lee, Chang-Fu Dee, Burhanuddin Yeop Majlis, Edward Yi Chang, “Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition,” Appl. Phys. Express 12, 015502 (2019). (Impact Factor: 2.77) Q1(國際合作)
  2. Chih-Han Tseng and Chih Chen*, “Growth of Highly (111)-Oriented Nanotwinned Cu with the Addition of Sulfuric Acid in CuSO4 Based Electrolyte” Crystal Growth and Design, 19, 81−89 (2019). (Impact Factor:4.15) Q1
  3. T. Wu, and C. Chen, “Low Temperature Cu-to-Cu Bonding in Non-vacuum Atmosphere with Thin Gold Capping on Highly (111) Oriented Nanotwinned Copper.” Journal of Electronic Materials, 49, 13 (2020) (Impact Factor:1.66) Q2
  4. J. Wang, C. S. Ku, T. N. Lam, E. W Huang, K. N. Tu, and C. Chen, “Tuning Stress in Cu Thin Films by Developing Highly (111)-Oriented Nanotwinned Structure.” Journal of Electronic Materials, 49, 13. (2020) (Impact Factor:1.66) Q2(國際合作)
  5. Chang-Hsun Huang, Anahita Pakzad, Wei-I Lee, and Yi-Chia Chou*, “Structure and Strain Relaxation of GaN Nanorods Grown on Homoepitaxial Surface via Controlling Irregular Mask” Phys. Chem. C 123, 3172 (2019). (Impact Factor:4.31) Q1(國際合作)
  6. Yi-Ting Chiang, Yi Chou, Chang-Hsun Huang, Wei-Ting Lin, Yi-Chia Chou*, “Dependence of Structure and Orientation of VSS grown Si nanowires on Epitaxy Process” CrystEngComm, 21, 4298-4304 (2019). (Impact Factor:3.38) Q1
  7. E-Wen Huang*, Soo Yeol Lee, Jayant Jain, Yang Tong, Ke An, Nien-Ti Tsou, Tu-Ngoc Lam, Dunji Yu, Hobyung Chae, Shi-Wei Chen, Shih-Min Chen, and Hung-Sheng Chou, “Hardening steels by the generation of transient phase using additive manufacturing” Intermetallics 109, 60-67 (2019). (Impact Factor:3.35) Q1(國際合作)
  8. E-Wen Huang*, Chih-Ming Lin, Jenh-Yih Juang, Yao-Jen Chang, Yuan-Wei Chang, Chan-Sheng Wu, Che-Wei Tsai, An-Chou Yeh, Sean R. Shieh, Ching-Pao Wang, Yu-Chun Chuang, Yen-Fa Liao, Dongzhou Zhang, Tony Huang, Tu-Ngoc Lam, Yi-Hung Chen, “Deviatoric deformation kinetics in high entropy alloy under hydrostatic compression”, Journal of Alloys and Compounds, 792, 116-121 (2019). (Impact Factor:3.78) Q1(國際合作)
  9. Pei-I. Tsai, Tu-Ngoc Lam, Meng-Huang Wu, Kuan-Ying Tseng, Yuan-Wei Chang, Jui-Sheng Sun, Yen-Yao Li, Ming-Hsueh Lee, San-Yuan Chen, Chung-Kai Chang, Chun-Jen Su, Chia-Hsien Lin, Ching-Yu Chiang, Ching-Shun Ku, Nien-Ti Tsou, Shao-Ju Shih, Chun-Chieh Wang, and E-Wen Huang*, “Multi-scale mapping for collagen-regulated mineralization in bone remodeling of additive manufacturing porous implants” Materials Chemistry and Physics, 230, 83-92 (2019). (Impact Factor:2.21) Q2
  10. Tu-Ngoc Lam, You-Shiun Chou, Yao-Jen Chang, Tsung-Ruei Sui, An-Chou Yeh, Stefanus Harjo, Soo Yeol Lee, Jayant Jain, Bo-Hong Lai, and E-Wen Huang*, “Comparing Cyclic Tension-Compression Effects on CoCrFeMnNi High-Entropy Alloy and Ni-Based Superalloy” Crystals, 9, 420-427 (2019) (Impact Factor:2.14) Q2(國際合作)
  11. Tu-Ngoc Lama, Chun-Chieh Wang*, Wen-Ching Ko, Jyh-Ming Wu, Sz-Nian Lai , Wei-Tsung Chuang, Chun-Jen Su, Chia-Yin Ma, Mao-Yuan Luo, Ying-Jhih Wang, and E-Wen Huang*, “Tuning mechanical properties of electrospun piezoelectric nanofibers by heat treatment” Materialia, 8, 100461(2019). (國際合作)
  12. E-Wen Huang*, Hung-Sheng Chou*, K. n. Tu, Wei-Song Hung, Tu-Ngoc Lam, Che-Wei Tsai, Ching-Yu Chiang, Bi-Hsuan Lin, An-Chou Yeh, Shan-Hsiu Chang, Yao-Jen Chang, Jun-Jie Yang, Xiao-Yun Li, Ching-Shun Ku, Ke An*, Yuan-Wei Chang, and Yu-Lun Jao, “Element Effects on High-Entropy Alloy Vacancy and Heterogeneous Lattice Distortion Subjected to Quasi-equilibrium Heating” Scientific Reports, 9, 14788 (2019). (Impact Factor:4.12) Q1(國際合作)
  13. Tu-Ngoc Lam, Chen-Hsien Wu, Sheng-Hsiu Huang, Wen-Ching Ko, Yu-Lih Huang,Chia-Yin Ma, Chun-Chieh Wang* , and E-Wen Huang*, “Multi-Scale Microstructure Investigation for a PM2.5 Air-Filter Efficiency Study of Non-Woven Polypropylene” Quantum beam science, 3, 20(2019). (國際合作)
  14. -E. Huang, C.-L. Yu, and P. Su, “Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs and Si Negative-Capacitance FinFETs Considering Quantum-Confinement Effect,” IEEE Transactions on Electron Devices, 66, 2538-2543, (2019). (Impact Factor:2.62) Q1
  15. -X. You, P. Suand C. Hu, “Evaluation of NC-FinFET Based Subsystem-Level Logic Circuits,” IEEE Transactions on Electron Devices, 66, 2004-2009 (2019). (Impact Factor:2.62) Q1
  16. -X. You and P. Su, “Depolarization Field in Ferroelectric Nonvolatile Memory Considering Minor Loop Operation,” IEEE Electron Device Letters, 40, 1415-1418 (2019).(Impact Factor: 3.75) Q1
  17. Fu-Chun Chen, Jui-Yuan Chen, Ya-Hsuan Lin, Ming-Yu Kuo, Yung-Jung Hsu, and Wen-Wei Wu*, “In Situ TEM Observation of Au-Cu2O Core-Shell Growth in Liquid,” Nanoscale, 11: 10486-10492 (2019). (Impact Factor:6.97) Q1
  18. Wan-Jhen Lin, Ting-Yi Lin, Chun-Wei Huang, Yi-Hsin Ting, Tsung-Chun Tsai, Chih-Yang Huang, Chih-Yang Huang, Shu-Meng Yang, Kuo Chang Lu, and Wen-Wei Wu* “Unique amorphization-mediated growth to form heterostructured silicide nanowires by solid-state reactions,’’ Materials & Design, 169, 107674 (2019). (Impact Factor:5.77) Q1
  19. Van-Qui Le, Thi-Hien Do, José Ramón Durán Retamal, Pao-Wen Shao, Yu-Hong Lai, Wen-Wei Wu, Jr-Hau He, Yu-Lun Chueh and Ying-Hao Chu “Van der Waals Heteroepitaxial AZO/NiO/AZO/Muscovite (ANA/muscovite) Transparent Flexible Memristor,’’ Nano Energy, 56, 322-329(2019). (Impact Factor:15.55) Q1 (國際合作)
  20. Che‐Yi Lin, Chao‐Fu Chen, Yuan‐Ming Chang, Shih‐Hsien Yang, Ko‐Chun Lee, Wen-Wei Wu*, Wen‐Bin Jian and Yen‐Fu Lin* “A Triode Device with a Gate Controllable Schottky Barrier: Germanium Nanowire Transistors and Their Applications,’’ Small, 1900865 (2019). (Impact Factor:10.86) Q1
  21. Ya-Hsuan Lin, Jui-Yuan Chen, Fu-Chun Chen, Ming-Yu Kuo, Yung-Jung Hsu, and Wen-Wei Wu* “In Situ Analysis of Growth Behaviors of Cu2O Nanocubes in Liquid Cell TEM,’’ Analytical Chemistry, 91, 9665-9672 (2019). (Impact Factor:6.35) Q1
  22. Ting-Yi Lin, Shih-Kuang Lee, Guan-Min Huang, Chun-Wei Huang, Kuo-Lun Tai, Chih-Yang Huang, Yu-Chieh Lo, and Wen-Wei Wu* “Electron Beam Irradiation-Induced Deoxidation and Atomic Flattening on Copper Surface,’’ ACS Appl. Mater. Interfaces, 11, 43, 40909-40915 (2019). (Impact Factor:8.45) Q1
  23. Min‐Ci Wu, Yi‐Hsin Ting, Jui‐Yuan Chen, and Wen-Wei Wu* “Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays,’’ Adv. Sci. 6, 1902363 (2019). (Impact Factor:15.8) Q1
  24. Chih-Yang Huang, Kuo-Lun Tai, Chun-Wei Huang, Yi-Tang Tseng, Hung-Yang Lo,and Wen-Wei Wu* “Dynamic observation on the functional metal oxide conversion behaviors in Fe3O4/ZnO heterostructures,’’ Scr. Mater. 177, 192-197 (2019). (Impact Factor:4.74) Q1
  25. Yi-Hsin Ting, Chun-Wei Huang, Akira Yasuhara, Sheng-Yuan Chen, Jui-Yuan Chen, Li Chang, Kuo-Chang Lu*, and Wen-Wei Wu* “Atomic Imaging of Molybdenum Oxide Nanowires with Unique and Complex Periodicity by Advanced Electron Microscopy”, Nano Lett. (2019) DOI: 10.1021/acs.nanolett.9b03510. (Impact Factor:12.28) Q1(國際合作)
  26. Kuo-Lun Tai, Chun-Wei Huang, Ren-Fong Cai, Guan-Ming Huang, Ti-Tang Tseng, Jun Chen amd Wen-Wei Wu*, “Atomic-Scale Fabrication of In-Plane Heterojunctions of Few-Layer MoS2 via In Situ Scanning Transmission Electron Microscopy”, Small, 1905516 (2019). (Impact Factor:10.86) Q1(國際合作) “獲選為當期封面故事”
  27. Guan-Min Huang, Chun-Wei Huang, Nagesh Kumar, Chih-Yang Huang, Tseung-Yuen Tseng, and Wen-Wei Wu, “In situ TEM investigation of electron beam-induced ultrafast chemical lithiation for charging’’ J. Mater. Chem. A, 8, pp648-655 (2020). (Impact Factor:10.73) Q1 (國際合作)
  28. Chih-Yang Huang, Yi-Tang Tseng, Hung-Yang Lo, Jeng-Kuei Chang, and Wen-Wei Wu, “In situ atomic scale investigation of Li7La3Zr2O12-based Li+-conducting solid electrolyte during calcination growth’’ Nano Energy, 71, 104625, (2020). (Impact Factor:15.55) Q1
  29. Yi-Hsuan Chen, Chun-Jung Su, Chenming Hu, and Tian-Li Wu*, “Effects of Annealing on Ferroelectric Hafnium Zirconium Oxide-Based Transistor Technology,” IEEE Electron Device Letters, 40, 467-470 (2019). (Impact Factor: 3.75) Q1
  30. Bo-Yuan Chen, Kun-Ming Chen, Yu-Shao Jerry Shiao, Chuang-Ju Lin, Guo-Wei Huang, Hsiu-Chih Chen, Fu-Kuo Hsueh, Chang-Hong Shen, Jia-Min Shieh, Edward Yi Chang, “DC and high-frequency characteristics of trigate polycrystalline-silicon thin-film transistors with different layout geometries” Japanese Journal of Applied Physics 58, SBBJ05 (2019). (Impact Factor: 1.47) Q2
  31. Venkatesan Nagarajan, Kun-Ming Chen, Huan-Chung Wang, Sankalp Kumar Signh, Deepak Anandan, Yueh-Chin Lin, Edward Yi Chang, “A Simple Extraction Method for Parasitic Series Resistances in GaN HEMTs Considering Non-Quasi-Static Effects”, Microelectronics Journal, 87, 51-54. (2019) (Impact Factor: 1.28) Q2
  32. Jing Neng Yao, Yueh Chin Lin, Min Song Lin, Ting Jui Huang, Heng Tung Hsu, Simon M. Sze, Edward Y. Chang, “Evaluation of an InAs HEMT with source-connected field plate for highspeed and low-power logic applications”, Solid State Electronics 157, 55-60 (2019) (Impact Factor: 1.49) Q2
  33. Jing-Neng Yao, Yueh-Chin Lin, Ying-Chieh Wong, Ting-Jui Huang, Heng-Tung Hsu, Simon M. Sze, and Edward Yi Chang,” Communication—Potential of the π-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications”, ECS Journal of Solid State Science and Technology, 8 (6), P319-321 (2019) (Impact Factor: 1.79) Q2
  34. Deepak Anandan, Venkatesan Nagarajan, Ramesh Kumar Kakkerla, Hung Wei Yu, Hua Lun Ko, Sankalp Kumar Singh, Ching Ting Lee, Edward Yi Chang, “Crystal Phase Control in Self-catalyzed InSb Nanowires Using Basic Growth Parameter V/III Ratio”, Journal of Crystal Growth, 522, 30-36 (2019) (Impact Factor: 1.57) Q2
  35. Deepak Anandan, Ramesh Kumar Kakkerla, Hung Wei Yu, Hua Lun Ko, Venkatesan Nagarajan, Sankalp Kumar Singh, Ching Ting Lee, Edward Yi Chang, “Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1 1 1) substrate by MOCVD,” Journal of Crystal Growth, 506, 45-54 (2019). (Impact Factor: 1.57) Q2
  36. Chia-Hsun Wu, Jian-You Chen, Ping-Cheng Han, Ming-Wen Lee, Kun-Sheng Yang, Huan-Chung Wang, Po-Chun Chang, Quang Ho Luc, Yueh-Chin Lin, Chang-Fu Dee, Azrul Azlan Hamzah, Edward Yi Chang, “Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm2 Specific On-Resistance for Power Device Applications”, IEEE Transactions on Electron Devices, 66, 3441 – 3446 (2019). (Impact Factor:2.62) Q1(國際合作)
  37. Sankalp Kumar Singh, Ramesh Kumar Kakkerla, H Bijo Joseph, Ankur Gupta, Deepak Anandan, Venkatesan Nagarajan, Hung Wei Yu, D John Thiruvadigal, Edward Yi Chang, “Optimization of InAs/GaSb core-shell nanowire structure for improved TFET performance” Materials Science in Semiconductor Processing, 101, 247-252 (2019). (Impact Factor:2.72) Q1(國際合作)
  38. Cheng-Hsien Lu, Shu-Yan Jhu, Chiao-Pei Chen, Bin-Ling Tsai, and Kuan-Neng Chen, “Asymmetric Wafer-level Polyimide and Cu/Sn Hybrid Bonding for 3D Heterogeneous Integration,” IEEE Transactions on Electron Devices, 66(7), 3073-3079 (2019). (Impact Factor:2.62) Q1
  39. Cheng-Hsien Lu, Yi-Tung Kho, Chiao-Pei Chen, Bin-Ling Tsai, and Kuan-Neng Chen, “Adhesion and Material Properties between Polyimide and Passivation Layers for Polymer/Metal Hybrid Bonding in 3D Integration”, IEEE Transactions on Components, Packaging and Manufacturing Technology, 3(9), 412-418, (2019). (Impact Factor: 2.26) Q1
  40. J. Chang, M. H. Chung, M. Y. Kao, S. F. Lee, Y. H. Yu, C. C. Kaun, T. Nakamura, N. Sasabe, S. J. Chu and Y. C. Tseng*, “GdFe0.8Ni0.2O3: a multiferroic material for low-power spintronic devices with high storage capacity, ACS Applied Materials & Interfaces, 11, 31562 (2019). (Impact Factor:8.46) Q1(國際合作)
  41. J. Chang, S. Y. Chen, P. W. Chen, S. J. Huang, and Y. C. Tseng*, “Pulse-driven non-volatile perovskite memory with photovoltaic read-out characteristics”, ACS Applied Materials & Interfaces, 11, 33803-33810 (2019). (Impact Factor:8.46) Q1
  42. Y. Chung, C.F. Li, C.T. Lin, Y.T. Ho and C.H. Chien, “Experimentally Determining the Top and Edge Contact Resistivities of Two-step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurement,” IEEE Electron Device Lett., 40, 1662-1665 (2019) DOI: 10.1109/LED.2019.2935538 (Impact Factor: 3.75) Q1
  43. Y. Chung, K.C. Lu, C.C. Cheng, M.Y. Li, C.T. Lin, C.F. Li, J.H. Chen, T.Y. Lai, K.S. Li, J.M. Shieh, S.K. Su, H.L. Chiang, T.C. Chen, L.J. Li, H.-S. Philip Wong, Fellow, IEEE, W.B. Jian and C.H. Chien “Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS2 Channel Directly Grown on SiOx/Si Substrates Using Area-Selective CVD Technology,” IEEE Transactions on Electron Devices, 66, 12, Dec. (2019) DOI: 10.1109/TED.2019.2946101(Impact Factor:2.62) Q1
  44. Iwan Susanto, Chi-Yu Tsai, Fachruddin, Tia Rahmiati, Yen-Ten Ho, Ping-Yu Tsai, Ing-SongYu, “The influence of 2D MoS2 layers on the growth of GaN films by plasmaassisted molecular beam epitaxy”, Applied Surface Science 496, 143616 (2019) (Impact Factor:5.15) Q1 (國際合作)
  45. Emmanuele Galluccio, Nikolay Petkov , Gioele Mirabelli , Jessica Doherty, Shih-Ya Lin, Fang-Liang Lu, W. Liu, Justin D. Holmes, “ Ray DuffyFormation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0.92Sn0.08”, Thin Solid Films 690, 137568 (2019) (Impact Factor:1.88) Q2 (國際合作)
  46. Pin-Shiang Chen and  W. Liu, “Theoretical Calculation of Ferroelectric Hf1-xZrxO2 by First-Principle Molecular Dynamic Simulation,” Mater. Res. Express6, 095045, (2019) (Impact Factor:1.45) Q2
  47. Tsutsui, Y.-C. Chen, “Heat dissipation in quasi-ballistic single-atom contacts at room temperature,” Scientific Report, 9, 18677 (2019). (Impact Factor:4.12) Q1
  48. Turenne and A. Useinov, “Direct Tunneling and related TMR anomalies in magnetic tunnel junctions with embedded nanoparticles” IEEE Trans. on Mag. 55, 1-4 (2019). (Impact Factor:1.65) Q2
  49. Ranjit A. Patil, Hao-Wei Tu, Ming-Hsing Jen, Jing-Jia Lin, Ching-Cherng Wu, Chun-Chuen Yang, Duy Van Pham, Chih-Hung Tsai, Chien-Chih Lai, Yung Liou, Wen-Bin Jian*, and Yuan-Ron Ma*, “Intriguing field-effect-transistor performance of two-dimensional layered and crystalline CrI3,” Materials Today Physics, published online, https://doi.org/10.1016/j.mtphys.2019.100174. (Impact Factor:24.372) Q1
  50. H. Yang, C. J. Su*, Y. S. Wang, K. H. Kao, Y. J. Lee, T. L. Wu*, “Impact of the Polarization on Time-Dependent Dielectric Breakdown in Ferroelectric Hf0.5Zr0.5O2 on Ge Substrates,” Jpn. J. Appl. Phys., 59, SGGB08 (2020) (Impact Factor: 1.47) Q2
  51. Chiung-Yuan Lin, Szu-Wen Yang, Keng-Liang Ou, and Barbara A. Jones, “Activated layered magnetism from bulk TiN”, Phys. Rev. Materials 3, 124412 (Impact Factor:2.96) Q1(國際合作)
  52. W-X. You, P. Su and C. Hu, “A New 8T Hybrid Nonvolatile SRAM with Ferroelectric FET,” IEEE Journal of the Electron Devices Society, vol. 8, pp. 171-175 (2020). (Impact Factor:2.0) Q1
  53. Y-S. Liu and P. Su, “Variability Analysis for Ferroelectric FET Nonvolatile Memories Considering Random Ferroelectric-Dielectric Phase Distribution,” IEEE Electron Device Letters, vol. 41, no. 3, pp. 369-372 (2020). (Impact Factor: 3.75) Q1
  54. S-E. Huang, S.-H. Lin, and P. Su, “Investigation of Inversion Charge Characteristics and Inversion Charge Loss for InGaAs Negative-Capacitance Double-Gate FinFETs Considering Quantum Capacitance,” IEEE Journal of the Electron Devices Society, vol. 8, pp. 105-109 (2020). (Impact Factor:2.0) Q1

International Conference 55篇,如下:

  1. Sankalp Kumar Singh, Ankur Gupta, Deepak Anandan, Ramesh Kumar Kakkerla, Venkatesan Nagarajan, Hung Wei Yu, A. Mohan Babu, N. Mohan Kumar, Edward Yi Chang, “Noise Analysis in InAs/GaSb Heterostructure Tunnel Field Effect Transistor”, 5th International Conference on Nanoscience and Nanotechnology (ICONN), Chennai, India, Jan. 28-30, 2019.
  2. Sankalp Kumar Singh, Ankur Gupta, Venkatesan Nagarajan, Deepak Anandan, Ramesh Kumar Kakkerla, Hung Wei Yu, Edward Yi Chang, “A novel p-channel GaSb based TFET with Pocket implant”, 5th International Conference on Nanoscience and Nanotechnology (ICONN), Tamil Nadu, India, Jan. 28-30, 2019.
  3. S-E. Huang, S.-H. Lin, and P. Su, “Analysis and Design of InGaAs Negative-Capacitance FinFETs considering Quantum Capacitance,” 3rd Electron Devices Technology and Manufacturing (EDTM) Conference 2019, Singapore, March 2019.
  4. Wen-Bin Jian, Pang-Chia Chang, Chun-Yang Ho, Zheng-Ji Ou, Ching-Hwa Ho, “Anisotropic electron transport behaviors in few-layer ReSe2”, Bulletin of the American Physical Society, March 5, 2019.
  5. Chanho Lee, Gian Song, Wei Chen, Michael Gao, Yi Chou, Yi-Chia Chou, Jamieson Brechtl, Hahn Choo, Peter Liaw “Lattice Distortion and Its Effect on Mechanical Behavior in Single-Phase Nb-Ta-Ti-V-Zr Refractory High-entropy Alloy Systems” TMS Annual Meeting, San Antonio, USA. Mar. 10-14, 2019.
  6. Yi-Chia Chou, Yi Chou, Chanho Lee, Peter Liaw, “Measurement of Lattice Distortion in High Entropy Alloys” TMS Annual Meeting, San Antonio, USA, March 10-14 (2019). (Invited paper)
  7. Chun-Liang Lin, “Topological Appearances between Two Type-II Weyl Semimetals” APS March Meeting, Boston”, USA Mar. 4-9, 2019.
  8. Chi-Feng Li, Yun-Yan Chung, Chao-Ting Lin, Yen-Teng Ho and Chao-Hsin Chien,“Comparison of Experimentally Extracted Top and Edge Contact Resistivity by TLM Structure with Two-step Sulfurization Nb-Doped MoS2”, 2019 Electron Devices Technology and Manufacturing Conference (EDTM), Singapore, 12-15 March 2019
  9. Su (Invited) and W.-X. You, “Device Structural Effects, SPICE Modeling and Circuit Evaluation for Negative-Capacitance FETs,” 2019 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, April 2019.
  10. Yi-Tang Tseng, Kuo-Lun Tai, Po-Wei. Wu, and Wen-Wei Wu* “Sub 10nm localized thinning of atomic layers WS2 through in-situ STEM/TEM”, Materials Research Society (MRS), Phoenix, Arizona, USA. Apr.22-26, 2019.
  11. Hsin-Mei Lu, Chih-Yang Huang and Wen-Wei Wu* “Dynamic Investigation of Titanium Disilicide Formation by In Situ TEM”, Materials Research Society (MRS), Phoenix, Arizona, USA. Apr.22-26, 2019.
  12. An-Yuan Hou, Chih-Yang Huang, and Wen-Wei Wu* “In-situ TEM investigation of low resistivity NiSi formation on Silicon layer”, Materials Research Society (MRS), Phoenix, Arizona, USA. Apr.22-26, 2019.
  13. Hung-Yang Lo, Guan-Min Huang and Wen-Wei Wu* “Direct observation of conducting channels in SrCoOx layer”, Materials Research Society (MRS), Phoenix, Arizona, USA. Apr.22-26, 2019.
  14. W. Huang, K.C. Shie, H.C. Liu, Y.J. Li, H.Y. Cheng, and C. Chen, “Copper-to-copper direct bonding using different (111) surface ratios of nanotwinned copper films”, 2019 International Conference on Electronics Packaging (ICEP), Niigata, Japan. April 17-20, 2019
  15. Yu-Jin Li, Wei-Yu Hsu, Benson Lin, ChiaCheng Chang, Chih Chen, “High-toughness (111) nano-twinned copper lines for fan-out wafer-level packaging”, 2019 International Conference on Electronics Packaging (ICEP), Niigata, Japan. April 17-20, 2019
  16. Emmanuele Galluccio, Gioele Mirabelli, Dan O’Connell, Jessica Anne Doherty, Nikolay Petkov, Justin D. Holmes, Shih-Ya Lin, Fang-Liang Lu, W. Liu, and Ray Duffy, “Ni, Pt, and Ti stanogermanide formation on Ge0.92Sn0.08”, 5th joint EUROSOI – ULIS 2019 Conference, Grenoble, France, April 1-3, 2019
  17. Chih Chen, Jing-Ye Juang, Shih Yang Chang, Kai Cheng Shie, Yu Jin Li, and K. N. Tu, “Low-temperature Cu-to-Cu direct bonding enabled by highly (111)-oriented and nanotwinned Cu”, 2019 International Conference on Electronics Packaging (ICEP), Niigata, Japan. April 17-20, 2019
  18. Yi-Lun Yang, Jia-Ling Liu, Guan Wei Chen, Shoichi Kodama, Kyosuke Kobinata, Kuan-Neng Chen, Hiroyuki Ito, Young Suk Kim, Takayuki Ohba, “Highly Reliable Four-Point Bending Test Using Stealth Dicing Method for Adhesion Evaluation,” 2019 International Conference on Electronics Packaging (ICEP) Conference, Toki Messe, Niigata, Japan, Apr. 17-20, 2019.
  19. Jing Ye Juang, Kai Cheng Shie1, Po-Ning Hsu1, Yu Jin Li, K N Tu, and Chih Chen, “Low-resistance and high-strength copper direct bonding in no-vacuum ambient using highly (111)-oriented nano-twinned copper”, 2019 IEEE 69th Electronic Components and Technology Conference (ECTC), Las Vegas, USA. May 28-31, 2019
  20. Edward Yi Chang, Ho Quang Luc, Chin Yueh Lin, “High-Performance In0. 53Ga0. 47 As FinFETs for logic and RF Applications”, 2019 Compound Semiconductor Week (CSW), Nara, Japan, May 19-23, 2019.
  21. Ping-Cheng Han, Chia-Hsun Wu, Yu-Hsuan Ho, Zong-Zheng Yan, Edward Yi Chang, “Recess-Free Normally-off GaN MIS-HEMT Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure”, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, May 19-23, 2019.
  22. P-C. Han, C.-Y. Yang, M.-W. Lee, J.-S. Wu, C.-H. Wu and Edward Yi Chang, “High Performance Normally-Off AlGaN/GaN MIS-HEMT Using Charge Storage Technique”, 2019 Compound Semiconductor Week (CSW), Nara, Japan, May 19-23, 2019.
  23. Kai-Ming Yang, Tzu-Chieh Chou, Cheng-Ta Ko, Chen-Hao Lin, Yu-Hua Chen, Tzyy-Jang Tseng, Wen-Wei Wu, and Kuan-Neng Chen, “Low Temperature Cu-Cu Gang Bonding for RDL-First Fan-Out Panel Level Package,” 6th International Workshop on Low Temperature Bonding for 3D Integration, Kanazawa, Japan, May 21-25, 2019.
  24. Yu-Jin Li, Chih-Han Theng, I-Hsin Tseng, and Chih Chen, “Highly (111)-oriented Nanotwinned Cu for High Fatigue Resistance in fan-out wafer-level packaging”, 2019 IEEE 69th Electronic Components and Technology Conference (ECTC), Las Vegas, USA. May 28-31, 2019
  25. I-Hsin Tseng,Yu-Jin Li, Benson Lin, Chia-Cheng Chang, and Chih Chen, “High Electromigration Lifetimes of Nanotwinned Cu Redistribution Lines”, 2019 IEEE 69th Electronic Components and Technology Conference (ECTC), Las Vegas, USA. May 28-31, 2019
  26. Edward Yi Chang, Yen-Ku Lin, “Ohmic Contacts with low contact resistance for GaN HEMTs”, 2019 19th International Workshop on Junction Technology (IWJT), Kyoto, Japan, June 6-7, 2019.
  27. -T Tang, C.-L. Fan, Y.-C. Kao, N. Modolo, C.-J. Su, T.-L. Wu, K.-H. Kao, P.-J. Wu, S.-W. Hsaio, A. Useinov, P. Su, W.-F. Wu, G.-W. Huang, J.-M. Shieh, W.-K. Yeh, and Y.-H. Wang, “A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs”, 2019 Symposium on VLSI Technology, Kyoto, Japan, June 2019.
  28. Yi-Jan Lin, Chih-Yu Teng, Yu-Hua Tsai, Shu-Jui Chang, Chun-Jung Su and Yuan-Chieh Tseng, “Ferroelectric Stability of HfO2 Oxide Semiconductors Probed by X-ray Techniques”, Collaborative Conference on Materials Research (CCMR), Goyang Gyeonggi, South Korea. June 3-7, 2019.
  29. Chih-Yu Teng, Yi-Jan Lin, Shu-Jui Chang, Chun-Jung Su and Yuan-Chieh Tseng, “Time-dependent Voltage Effects on Microwave Annealed Hf5Zr0.5O2 Ferroelectric Capacitors Probed by X-ray Techniques”, Collaborative Conference on Materials Research (CCMR), Goyang Gyeonggi, South Korea. June 3-7, 2019.
  30. Jaw-Yeu Liang, Yu-Jun Chou, Wen-Chin Lin, Hong-Ji Lin, Po-Wen Chen, and Yuan-Chieh Tseng,“Hydrogen Sensors Using [Co/Pd]n Structure with Perpendicular Magnetic Anisotropy”, International Conference on Innovative Engineering Technologies (ICIET), Tokyo, Japan, July 7-8, 2019.
  31. I-Chen Wu, Po-Tsang Huang, Chin-Yang Lo, and Wei Hwang, “An Energy-Efficient Accelerator with Relative Indexing Memory for Sparse Compressed Convolutional Neural Network,” IEEE International Conference on Artificial Intelligence Circuits and Systems (AICAS), 2019.
  32. C. Chen (Award Lecture), “Seebeck effect, Peltier Cooling, and ZT in Atomic/Molecular Junctions from First Principles,” 27th Assembly of Advanced Materials Congress, Sweden, August 11 -14 (2019).
  33. Huan-Jan Tseng, Po-Tsang Huang, Shang-Lin Wu, Sheng-Chi Lung, Wei-Chang Wang, Wei Hwang and Ching-Te Chuang, “28nm 0.3V 1W2R Sub-Threshold FIFO Memory for Multi-Sensor IoT Applications,” IEEE System-on-Chip Conference (SoCC), pp.1-6, Sept. 2019.
  34. W. Kang, C. J. Su*, T. H. Hou, “New Contact-first Two-dimensional Transistor,” Int’l Conf. Solid State Devices and Materials (SSDM), 905, Nagoya, Japan, September 2-5 (2019)
  35. H. Yang, C. J. Su*, Y. S. Wang, K. H. Kao, Y. J. Lee, T. L. Wu*, “Polarization Dependency of Time-Dependent Dielectric Breakdown (TDDB) Characteristics in Ferroelectric HfZrOx,” Int’l Conf. Solid State Devices and Materials (SSDM), 369, Nagoya, Japan, September 2-5 (2019)
  36. C. Lin, C. Wang, C. N. Kuo, M. W. Lee, J. N. Yao, T. J. Huang, H. T. Hsu, and Edward Y. Chang, “Study of Enhancement-Mode Tri-Gate InAs HEMTs for Low Noise Application”, European Microwave Conference – 1st – 3rd October 2019
  37. C. Lin, M. W. Lee, M. Y. Tsai, C. Wang, J. N. Yao, T. J. Huang, H. T. Hsu, J. S. Maa, and Edward Y. Chang, “Study of thick copper metallization with WNx as diffusion barrier for AlGaN/GaN HEMTs”, European Microwave Conference – 1st – 3rd October 2019
  38. Pin-Jun Chen, Chih-Ming Shen, Chih-Chao Yang, Ming-Chi Tai, Wei-Chung Lo, Chang-Hong Shen, Chenming Hu, and Kuan-Neng Chen, “Transient Thermal Damage Simulation for Novel Location-Controlled Grain Technique in Monolithic 3D IC”, IMPACT-IAAC 2019, Taipei, Taiwan, Oct. 23-25, 2019.
  39. [Invited] Kuan-Neng Chen, Tzu-Chieh Chou, Yi-Chieh Tsai, and Demin Liu, “Low Temperature Cu-Cu Direct Bonding for 3D Integration and Advanced Packaging,” ADMETA Plus 2019, Tokyo, Japan, Oct. 10 – Oct. 11, 2019.
  40. Yi-Chieh Tsai, Chia-Hsuan Lee, and Kuan-Neng Chen, “Investigation of Low Temperature Cu Pillar Eutectic Bonding for 3D Chip Stacking Technology”, IEEE 3D System Integration Conference, Sendai, Japan, Oct 8 – Oct 10, 2019.
  41. Po-Chih Chen, Demin Liu, and Kuan-Neng Chen, “Low-Temperature Wafer-Level Au-Au Bonding at 100°C”, IEEE 3D System Integration Conference, Sendai, Japan, Oct 8 – Oct 10, 2019.
  42. Demin Liu, Po-Chih Chen, Yi-Chieh Tsai, and Kuan-Neng Chen, “Low Temperature Cu-Cu Direct Bonding Below 150°C with Au Passivation Layer”, IEEE 3D System Integration Conference, Sendai, Japan, Oct 8 – Oct 10, 2019.
  43. Edward Yi Chang, Quang-Ho Luc, Nhan-Ai Tran, Yueh-Chin Lin, “Negative Capacitance III-V FinFETs for Ultra-Low-Power Applications”, 236th ECS Meeting, Atlanta, GA, Oct. 13-17, 2019.
  44. [Invited] Kuan-Neng Chen, Tzu-Chieh Chou, Yi-Chieh Tsai, and Demin Liu, “Applications and Schemes based on 3D Heterogeneous Integration,” The 13th International Conference on ASIC (ASICON 2019), Chonqing, China, Oct. 29-Nov.1, 2019.
  45. [Invited] Kuan-Neng Chen, “Cu-Based Bonded Interconnects for 3D Integration and Advanced Packaging Applications,” 2019 MRS-T Annual Meeting, Tainan, Taiwan, Nov. 15-16, 2019.
  46. Chanho Lee, Gian Song, Yi Chou, George Kim, Tingkun Liu, Ke An, Wei Chen, Yi-Chia Chou, Yanfei Gao, Peter Liaw “Investigation on Elastic and Plastic Deformation Behaviors of Refractory High-entropy Alloy at Elevated Temperatures via In-situ Neutron Studies” 1st World Congress on High Entropy Alloys (HEA 2019), Nov. 17-20, Seattle, WA, USA
  47. L. Lin, N. Kawakami, R. Arafune, E. Minamitani, N. Takagi “STS Studies of Layered Topological Materials” 27th International Colloquium on Scanning Probe Microscopy, Shizuoka, Japan, Dec.5-7 (2019).
  48. H. Chen, H. I. Huang, N. Kawakami, R. Arafune, N. Takagi and C. L. Lin “Non-centrosymmetric Electronic Structures of Defects on Type-II Weyl Semimetals” 27th International Colloquium on Scanning Probe Microscopy, Shizuoka, Japan, Dec.5-7 (2019)
  49. Tzu-Chieh Chou, Kai-Ming Yang, Jian-Chen Li, Ting-Yang Yu, Ying-Ting Chung, Cheng-Ta Ko, Yu-Hua Chen, Tzyy-Jang Tseng, and Kuan-Neng Chen, “Non-Planarization Cu-Cu Direct Bonding and Gang Bonding with Low Temperature and Short Duration in Ambient Atmosphere,” 2019 International Electron Devices Meeting (IEDM), San Francisco CA, Dec. 7-11, 2019.
  50. Ping-Yi Hsieh, Yi-Jui Chang, Pin-Jun Chen, Chun-Liang Chen, Chih-Chao Yang, Po-Tsang Huang, Yi-Jing Chen, Chih-Ming Shen, Yu-Wei Liu, Chien-Chi Huang, Ming-Chi Tai, Wei-Chung Lo, Chang-Hong Shen, Jia-Min Shieh, Da-Chiang Chang, Kuan-Neng Chen, Wen-Kuan Yeh, and Chenming Hu, “Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators”, 2019 International Electron Devices Meeting (IEDM), San Francisco CA, Dec. 7-11, 2019.
  51. Su (Invited) and W.-X. You, “Electrostatic Integrity in Negative Capacitance FETs – A Subthreshold Modeling Approach,” 2019 International Electron Devices Meeting (IEDM), 7.3.1-7.3.4, San Francisco, USA, Dec.7-11, 2019.
  52. S-W. Chang, P.-J. Sung, T-Y. Chu, D. D. Lu, C. -J. Wang, N.-C. Lin, C.-J. Su, S.-H. Lo, H.-F. Huang, J.-H. Li, M.-K. Huang, Y.-C. Huang, S.-T. Huang, H.-C. Wang, Y.-J. Huang, J.-Y. Wang, L.-W Yu, Y.-F. Huang, F.-K. Hsueh, C.-T. Wu, W. C.-Y. Ma, K.-H. Kao, Y.-J. Lee, C.-L. Lin, R.W. Chuang, K.-P. Huang, S. Samukawa, Y. Li, W.-H. Lee, T.-S. Chao, G.-W. Huang, W.-F. Wu, J.-Y. Li, J.-M. Shieh, W. -K. Yeh, Y.-H. Wang, “First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Application” 2019 International Electron Devices Meeting (IEDM), 7.3.1-7.3.4, San Francisco, USA, Dec.7-11, 2019.
  53. Shu-Jui Chang, Yi-Jan Lin, Chih-Yu Teng, Ying-Tsang Tang ‘‘The Ferroelectric Phase Homogeneity of HfZrO2 Probed by X-ray Absorption’’ in 2020 8th International Conference on Nano and Materials Science (ICNMS2020).
  54. Chen-Han Chou, Kai-Yu Peng, Kuan-Cheng Lu, Hao-Wei Tu and Shu-Jui Chang ‘‘Demonstration of High-quality WS2 Growth on SiN Substrate by a Low-temperature CVD Process’’ in 2020 8th International Conference on Nano and Materials Science (ICNMS2020).
  55. Chia-Hsing Wu, Ci-Hao Huang, Chu-Shou Yang, Shin-Yuan Wang and Chao-Hsin Chien ‘‘Study of epitaxial InSe grown on SiO2/Si substrate by molecular beam epitaxy’’ in 2020 8th International Conference on Nano and Materials Science (ICNMS2020).