2022中心學術成果發表

期刊論文

  1. Yi-Tang Tseng, Li-Syuan Lu, Fang-Chun Shen, Che-Hung Wang, Hsin-Ya Sung, Wen-Hao Chang, Wen-Wei Wu*.”In Situ Atomic-Scale Observation of Monolayer MoS2 Devices under High-Voltage Biasing via Transmission Electron Microscopy’’ Small, 18, 7, 2022. (Impact Factor: 13.281) Q1
  2. Yu-Lien Wu, Chih-Yang Huang, Hung-Yang Lo, Fang-Chun Shen, An-Yuan Ho, Yi-Tang Tseng, Akira Yasuhara, Wen-Wei Wu*.”In situ Atomic-scale Observation of the Conversion Behavior in a Cu-Zn Alloy for Twinnability Enhancement’’ Appl. Surf. Sci., 573, 2022. (Impact Factor: 6.707) Q1
  3. Hung-Yang Lo, Chun-Wei Huang, Chun-Chien Chiu, Jui-Yuan Chen, Fang-Chun Shen, Che-Hung Wang, Yen-Jung Chen, Chien-Hua Wang, Jan-Chi Yang, Wen-Wei Wu*.”Revealing Resistive Switching Mechanism in CaFeOx Perovskite System with Electroforming-Free and Reset Voltage-Controlled Multilevel Resistance Characteristics’’ Energy environ. mater., 5, 12430, 2022. (Impact Factor: 15.122) Q1
  4. Chia-Jou Liu, Hung-Yang Lo, An-Yuan Hou, Jui-Yuan Chen, Che-Hung Wang, Chun-Wei Huang, Wen-Wei Wu*.”Observing Resistive Switching Behaviors in Single Ta2O5 Nanotube-Based Memristive Devices’’ Materials Today Nano, 18, 100212, 2022. (Impact Factor: 8.109) Q1
  5. Jing-Han Chang, Yi-Tang Tseng, An-Yuan Ho, Hung-Yang Lo, Chih-Yang Huang, Shu-Chin Tsai, Tzu-Hsuan Yu, Yu-Lien Wu, Hsi-Kai Yen, Ping-Hung Yeh*, Kuo-Chang Lu*, Wen-Wei Wu*.”In situ TEM investigation of indium oxide/titanium oxide nanowire heterostructures growth through solid state reactions’’ Mater. Charact., 187, 111832, 2022. (Impact Factor: 4.342) Q1
  6. Ciao-Fen Chen, Shih-Hsien Yang, Che-Yi Lin*, Mu-Pai Lee, Meng-Yu Tsai, Feng-Shou Yang, Yuan-Ming Chang, Mengjiao Li, Ko-Chun Lee, Keiji Ueno, Yumeng Shi*,Chen-Hsin Lien, Wen-Wei Wu, Po-Wen Chiu, Wenwu Li*, Shun-Tsung Lo, Yen-Fu Lin*.”Reversible Charge-Polarity Control for Multioperation-Mode Transistors Based on van der Waals Heterostructures’’ Adv. Sci., 9, 2106016, 2022. (Impact Factor: 17.521) Q1
  7. Che-Yi Lin , Mu-Pai Lee, Yuan-Ming Chang*, Yi-Tang Tseng, Feng-Shou Yang, Mengjiao Li, Jiann-Yeu Chen, Ciao-Fen Chen, Meng-Yu Tsai, Yi-Chun Lin, Keiji Ueno, Mahito Yamamoto, Shun-Tsung Lo, Chen-Hsin Lien, Po-Wen Chiu, Kazuhito Tsukagoshi*, Wen-Wei Wu*, and Yen-Fu Lin*.”Diffused Beam Energy to Dope van der Waals Electronics and Boost Their Contact Barrier Lowering’’ ACS Appl. Mater. Interface, 14, 2c07679, 2022. (Impact Factor: 10.383) Q1
  8. An-Yuan Hou, Chih-Yang Huang, Chih-Long Tsai, Chun-Wei Huang, Roland Schierholz, Hung-Yang Lo, Hermann Tempel, Hans Kungl, Rüdiger-A. Eichel*, Jeng-Kuei Chang and Wen-Wei Wu*, ” All Solid-State Garnet-based Lithium Batteries at Work – In Operando TEM Investigations of Delithiation/Lithiation Process and Capacity Degradation Mechanism’’ Advanced Science 2205012, 2022 (December) (Impact Factor: 17.521) Q1 (國際合作)
  9. Hao-Wen Deng, Yi-Tang Tseng, Mu-Pai Lee, Yen-Fu Lin, Wen-Wei Wu*,.”In Situ TEM Observation of Electron-Beam-Induced Microstructural Evolution in van der Waals Layered Magnetic CrSBr Semiconductor’’ Adv. Electron.Mater.2022, 2200994 November 2022. (Impact Factor: 7.633) Q1
  10. Wei-Lun Weng, Hsin-Yu Chen, Yi-Hsin Ting, Hsin-Yi Tiffany Chen, Wen-Wei Wu, King-Ning Tu, and Chien-Neng Liao*.”Twin-Boundary Reduced Surface Diffusion on Electrically Stressed Copper Nanowires’’ Nano Lett. 2022, 22, 2c03437 November 2022. (Impact Factor: 12.262) Q1
  11. Chia-Ling Liu, Yi-Tang Tseng, Chun-Wei Huang, Hung-Yang Lo, An-Yuan Hou, Che-Hung Wang, Akira Yasuhara, and Wen-Wei Wu*.”Atomic Imaging and Thermally Induced Dynamic Structural Evolution of Two-Dimensional Cr2S3’’ Nano Lett. 2022, 22, 19, 7944–7951 September 2022. (Impact Factor: 12.262) Q1(國際合作)
  12. Zheng, X. X., Huang, J. Y., Yang, C. Y., & Chang, E. Y. (2022). Optimization for the growth condition of in situ SiN x cap layer on ultrathin barrier InAlGaN/GaN heterostructures by metal-organic chemical vapor deposition. Applied Physics Express, 15(2), 021001. Jan. 2022 (Impact Factor: 2.895) Q2
  13. Weng Y-C, Lin Y-C, Hsu H-T, Kao M-L, Huang H-Y, Ueda D, Ha M-T-H, Yang C-Y, Maa J-S, Chang E-Y, Dee C-F. A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer. Materials. Jan. 2022; 15(3):703. https://doi.org/10.3390/ma15030703 (Impact Factor: 3.623) Q1(國際合作)
  14. Ko, H. L., Luc, Q. H., Huang, P., Chen, S. M., Wu, J. Y., Hsu, C. W., … & Chang, E. Y. (2021). Nitrogen-Passivated (010) In0.53Ga0.47As FinFETs With High Peak gm and Reduced Leakage Current. IEEE Transactions on Electron Devices, 69, no. 2, 495-499, Feb. 2022, (Impact Factor: 2.917) Q2
  15. Le Trung Hieu, Chung-Han Chiang, Deepak Anandan, Chang-Fu Dee, Azrul Azlan Hamzah, Ching-Ting Lee, Chung-Hsiung Lin and Edward Yi Chang, “Improvements of electrical and thermal characteristics for AlGaN/GaN HEMT grown by metal-organic chemical vapor deposition on silicon-on-insulator (SOI) substrate”, Semicond. Sci. Technol. 37, 075012, June 1, 2022 (Impact Factor: 2.352) Q2(國際合作)
  16. Hua-Lun Ko, Quang Ho Luc, Ping Huang, Si-Meng Chen, Jing-Yuan Wu, Nhan-Ai Tran, Edward Yi Chang, “Electrical Characteristics of InGaAs Gate-All-Around MOSFETs With Different Nanowire Shapes”, IEEE Transactions on Electron Device, 69, 8, Aug. 2022. (Impact Factor: 2.917) Q2
  17. PC Sivanathan, Kai Shen Ooi, Muhammad Aniq Shazni Mohammad Haniff, Mohsen Ahmadipour, Chang Fu Dee, Norfilza Mohd Mokhtar, Azrul Azlan Hamzah, Edward Y Chang, “Lifting the Veil: Characteristics, Clinical Significance, and Application of β-2-Microglobulin as Biomarkers and Its Detection with Biosensors”, ACS Biomater. Sci. Eng. 2022, 8, 3142−3161. (Impact Factor:5.395) Q2 (Aug) (國際合作)
  18. Tsung-Ying Yang, Huuan-Yao Huang, Yan-Kui Liang, Jui-Sheng Wu, Mei-Yan Kuo, Kuan-Pang Chang, Heng-Tung Hsu, Edward-Yi Chang, “A Normally-off GaN MIS-HEMT Fabricated using Atomic Layer Etching to Improve Device Performance Uniformity for High Power Applications”, IEEE Electron Device Letters, 43, 1629 – 1632, Oct. 2022. (Impact Factor: 4.187) Q1
  19. Min-Lu Kao, Yan-Kui Liang, Yuan Lin, You-Chen Weng, Chang-Fu Dee, Po-Tsun Liu, Ching-Ting Lee, Edward Yi Chang, “InGaZnO Ferroelectric Thin-Film Transistor Using HfO₂/Al₂O₃/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window”, IEEE Electron Device Letters , 43, 2105 – 2108 Dec. 2022. (Impact Factor:4.816) (Q1) (國際合作)
  20. Kazuto Mizutani, Takuya HOSHII, Hitoshi WAKABAYASHI, Kazuo TSUTSUI, Edward Yi Chang, Kuniyuki Kakushima, “Robust formation of ferroelectric HfO2 films by Y2O3 sub-monolayer lamination”, Applied Physics Express 15, 121002 Nov.(2022) (Impact Factor:2.819) Q2 (國際合作)
  21. Chih Yi Yang, Jia Hong Wu, Chin Han Chung, Jhan Yi You, Tzu Chieh Yu, Cheng Jun Ma, Ching Ting Lee, Daisuke Ueda, Heng Tung Hsu, Edward Yi Chang, “Optimization of Forward and Reverse Electrical Characteristics of GaN-on-Si Schottky Barrier Diode Through Ladder-Shaped Hybrid Anode Engineering”, IEEE Transactions on Electron Devices, 69, 12, Nov. 2022 (Impact Factor: 2.917) Q2
  22. Tsu-Ting Lee, Kashi Chiranjeevulu, Sireesha Pedaballi, Daire cott, Annelies Delabie, Chang-Fu Dee, Edward Yi Chang, “Nucleation and growth mechanism for atomic layer deposition of Al2O3 on two-dimensional WS2 monolayer”, Vac. Sci. Technol. A, 41, 013201 (2023). (Published Online: 29 Nov. 2022) (Impact Factor:3.234) Q2 (國際合作)
  23. Yuan Lin, Min-Lu Kao, You-Chen Weng, Chang-Fu Dee, Shih-Chen Chen, Hao-Chung Kuo, Chun-Hsiung Lin, Edward-Yi Chang, “Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages” Micromachines 2022, 13(12), 2140. (Dec) (Impact Factor:3.523) Q2 (國際合作)
  24. K. -M. Chen, C.-J. Lin, B.-Y. Chen, G.-W. Huang, and E. Y. Chang, “Extraction of bias-dependent source and drain resistances in AlGaN/GaN MIS-HEMTs using pulsed measurement method,” ECS J. Solid State Sci. Technol., 11, 065008 June 2022. (Impact Factor: 2.070) Q2
  25. Chih-Wei Cheng, Kuan-Ming Chen , Jeng-Hua Wei , Yu-Chen Hsin , Shyh-Shyuan Sheu , Chih-I Wu, and Yuan-Chieh Tseng, “Stray Field and Combined Effects on Device Miniaturization of the Magnetic Tunnel Junctions,” J. Phys. D: Appl. Phys., 55, 195002, Feb. 2022. (Impact Factor: 3.207) Q2
  26. Yu-Han Huang, Chao-Yao Yang, Chih-Wei Cheng, Albert Lee, Chih-Hsiang Tseng, Hao Wu, Quanjun Pan, Xiaoyu Che, Chih-Huang Lai, Kang-Lang Wang, Hong-Ji Lin, and Yuan-Chieh Tseng, “A Spin-Orbit Torque Ratchet at Ferromagnet/Antiferromagnet Interface via Exchange Spring,” Adv. Funct. Mater., 32, 2111653, 2022. (Impact factor: 18.808) Q1
  27. Akhil K Ramesh, Chih-Wei Cheng, Ting-Chia Ku, Vaibhav Rana, Pratisha Gangwar, Pushparaj Singh and Yuan-Chieh Tseng*, “Interface Imperfection Effects on Spin Transfer Torque Switching: an Atomistic Approach,” Journal of Physics D: Applied Physics, 55, 195002, Feb. 2022. (Impact factor: 3.21) Q2
  28. Akhil K Ramesh, Yi-Ting Chou, Mu-Ting Lu, Pushparaj Singh and Yuan-Chieh Tseng*, “Biological sensing using anomalous hall effect devices,” Nanotechnology, 33, 335502, May. 2022. (Impact factor: 3.87) Q2
  29. C. Lin*, Y.C. Tseng and T. S. Chin, “A Review of the self-powered wiegand sensor and its applications”, Magnetochemistry 8, 128 Oct. 2022.(Impact Factor: 3.336) Q2
  30. C. -H. Wu, K.-C. Wang, Y.-Y. Wang, Chenming Hu, Chun-Jun Su, and Tian-Li Wu, “Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode,” Nanomaterials, Jan. 2022. (Impact Factor: 5.076) Q1 (國際合作)
  31. W. -X. You, B. -K. Huang and P. Su, “An Alternative Way for Reconfigurable Logic-in-Memory With Ferroelectric FET,” in IEEE Transactions on Electron Devices, 69, 444-446, Jan. 2022. (Impact Factor: 2.917) Q2
  32. Y. -S. Liu and P. Su, “Comparison of 2D MoS2 and Si Ferroelectric FET Nonvolatile Memories Considering the Trapped-Charge induced Variability,” IEEE Transactions on Electron Devices, 69, 5, 2738-2740, May 2022. (Impact Factor:2.917) Q2
  33. Shen, Y. A., Chang, L., Chang, S. Y., Chou, Y. C., Tu, K. N., & Chen, C. (2022). Nanotwin orientation on history-dependent stress decay in Cu nanopillar under constant strain. Nanotechnology, 33(15), 155708. (IF: 3.874) (Jan 2022) Q1
  34. Lin, P. F., Tran, D. P., Liu, H. C., Li, Y. Y., & Chen, C. (2022). Interfacial Characterization of Low-Temperature Cu-to-Cu Direct Bonding with Chemical Mechanical Planarized Nanotwinned Cu Films. Materials, 15(3), 937. (IF: 3.623) (Jan 2022) Q1
  35. Lee, K. P., Tran, D. P., Chen, F. C., Hsu, W. Y., Lin, Y. Q., Liu, H. C., & Chen, C. (2022). Mechanical Strengthening of Nanotwinned Cu Films with Ag Solid Solution. Materials Letters, 131775. (IF: 3.423) (Jan 2022) Q2
  36. Ong, J.J., Chiu, W. L., Lee, O. H., Chiang, C. W., Chang, H. H., Wang, C. H., Shie, K. C., Yang, S. C., Tran, D. P., Tu, K. N., & Chen, C. (2022). Low-Temperature Cu/SiO2 Hybrid Bonding with Low Contact Resistance Using (111)-Oriented Cu Surfaces. Materials. 15(5): 1888. (IF: 3.623) (Mar 2022) Q1
  37. Kuo, Y. H., Tran, D. P., Ong, J. J., Tu, K. N., & Chen, C. (2022). Hybrid Cu-to-Cu bonding with nano-twinned Cu and non-conductive paste. Journal of Materials Research and Technology, 18, 859-871. (IF: 5.039) (Mar 2022) Q1
  38. Fang, C. Y., Tran, D. P., Liu, H. C., Ong, J. J., Lin, Y. Q., Hsu, W. Y., & Chen, C. (2022). Effect of Electroplating Current Density on Tensile Properties of Nanotwinned Copper Foils. Journal of the Electrochemical Society, 169(4), 042503. (IF: 4.316) (Apr 2022) Q1
  39. Po-Ning Hsu, Kai-Cheng Shie, Kuan-Peng Chen, Jing-Chen Tu, Cheng-Che Wu, Nien-Ti Tsou, Yu-Chieh Lo, Nan-Yow Chen, Yong-Fen Hsieh, Mia Wu, Chih Chen & King-Ning Tu, “Artificial intelligence deep learning for 3D IC reliability prediction”, Scientific Reports, 12(1), 1-7. (IF: 4.38) (Apr 2022) Q1
  40. Liu, H. C., Yang, S. C., Ong, J. J., Tran, D. P., Gusak, A. M., Tu, K. N., & Chen, C. (2022). Evolution of interfacial voids in Cu-to-Cu joints. Materials Characterization, 112085. June 2022 (Impact Factor: 4.36) Q1
  41. Hsu, P. N., Shie, K. C., Tran, D. P., Tsou, N. T., & Chen, C. (2022). Failures of Cu-Cu Joints under Temperature Cycling Tests. Materials, 15(14), 4944. July 2022 (Impact Factor: 3.623) Q1
  42. Ong, J. J., Tran, D. P., Lan, M. C., Shie, K. C., Hsu, P. N., Tsou, N. T., & Chen, C. (2022). Enhancement of fatigue resistance by recrystallization and grain growth to eliminate bonding interfaces in Cu–Cu joints. Scientific Reports, 12(1), 1-10. July 2022 (Impact Factor: 4.996) Q1
  43. Hsu, W. Y., Tseng, I. H., Chiang, C. Y., Tu, K. N., & Chen, C. (2022). Distribution of elastic stress as a function of temperature in a 2-μm redistribution line of Cu measured with X-ray nanodiffraction analysis. Journal of Materials Research and Technology. Aug. 2022 (Impact Factor: 6.267) Q1
  44. Ong, J. J., Tran, D. P., Lin, Y. Y., Shen, F. C., Yang, S. C., Lee, K. P., … & Chen, C. (2022). Single-crystal-like Cu joints with high strength and resistance to fatigue failures. Materials Science and Engineering: A, 857, 144051. Sept. 2022 (Impact Factor: 6.044) Q1
  45. Hsu, P. N., Lee, D. L., Tran, D. P., Shie, K. C., Tsou, N. T., & Chen, C. (2022). Effect of Tin Grain Orientation on Electromigration-Induced Dissolution of Ni Metallization in SnAg Solder Joints. Materials, 15(20), 7115. Oct. 2022 (Impact Factor: 3.748) Q2
  46. Tran, D. P., Lin, T. W., Shie, K. C., & Chen, C. (2022). Non-destructive micro analysis of electromigration failures in solder microbumps using 3D X-ray computed tomography. Materials Characterization, 194, 112404. Oct. 2022 (Impact Factor: 4.537) Q1
  47. Chen, Y., Dai, W., Liu, Y., Chen, C., Tu, K. N., & Chen, G. (2022). Surface protrusion induced by inter-diffusion on Cu-Sn micro-pillars. Materials & Design, 111318. Oct. 2022 (Impact Factor: 9.417) Q1 (國際合作)
  48. Anindya Patra, Jui-Cheng Kao, Shang-Ju Chan, Po-Jung Chou, Jyh-Pin Chou, Yu-Chieh Lo*, Michael H Huang*, “Photocatalytic activity enhancement of Cu2O cubes functionalized with 2-ethynyl-6-methoxynaphthalene through band structure modulation”, Journal of Materials Chemistry C, 10, 3980 Feb 2022. (Impact Factor: 8.067) Q1
  49. Shang-Ju Chan, Jui-Cheng Kao, Po-Jung Chou, Yu-Chieh Lo, Jyh-Pin Chou*, Michael H Huang*, “4-Nitrophenylacetylene-modified Cu 2 O cubes and rhombic dodecahedra showing superior photocatalytic activity through surface band structure modulation”, Journal of Materials Chemistry C, 10, 8422 May 2022. (Impact Factor: 7.393) Q1
  50. Chae, H., Seo, S., Jung, Y. C., Huang, E. W., Jain, J., Han, J. H., & Lee, S. Y. (2022). Evaluation of Supercritical Carbon Dioxide Corrosion by High Temperature Oxidation Experiments and Machine Learning Models. Metallurgical and Materials Transactions A, 53, 2614–2626, May 2022. (Impact Factor: 2.556) Q1 (國際合作)
  51. Chen, S. W., Huang, E. W., Chiu, S. M., Reid, M., Wu, C. Y., Paradowska, A. M., … & Weng, S. C. (2022). Diffraction-based residual stress mapping of a stress frame of gray iron via vibratory stress relief method. Front. Mater., 9, 859342, April 2022 (Impact Factor: 3.515) Q2 (國際合作)
  52. Lam, T. N., Luo, M. Y., Kawasaki, T., Harjo, S., Jain, J., Lee, S. Y., … & Huang, E. W. (2022). Tensile Response of As-Cast CoCrFeNi and CoCrFeMnNi High-Entropy Alloys. Crystals, 12(2), 157, Jan, 2022. (Impact Factor: 2.589) Q2 (國際合作)
  53. Tu-Ngoc Lam, Andrew Lee, Yu-Ray Chiu, Hsuan-Fan Kuo, Takuro Kawasaki, Stefanus Harjo, Jayant Jain, Soo Yeol Lee, and E-Wen Huang* (2022). Estimating fine melt pool, coarse melt pool, and heat affected zone effects on the strengths of additive manufactured AlSi10Mg alloys. Materials Science & Engineering A, accepted. (Impact Factor: 6.044) Q1 (國際合作)
  54. Yu-Sheng Tsai, Chun-Ju Chen, Ying-Ti Huang, Keng-Tien Liang, Jia-Jie Jhang, Sheng-Han Huang, Ming-Hsien Li, YewChung Sermon Wu, Ming-Yu Kuo, Hsiang Chen, Dong-Sing Wuu, Jung Han “Incorporation of hydrophobic-like bisindolo quinoxaline-tips (BIQ-TIPs) aggregation on ZnO nanorods for spectral broadening photodetection”. Results in Physics, 34, 105318, Mar. (2022) (Impact Factor: 4.476) Q1 (國際合作)
  55. Yu-Sheng Tsai, Deng-Yi Wang, Ya-Hsuan Lin, Yu-He Zhang, Jia-Jie Jhang, Cheng-Shan Chen, Yew Chung Sermon Wu, Wen-Chang Huang, Tien-Chai Lin, Hsiang Chen, Jung Han, ”UV Light and H₂ Gas Dual Sensing Properties of ZnO/InGaZnO Match-Head Nanorods”, IEEE Electron Device Letters 43 (4), 607-610 April 2022. (Impact Factor: 4.187) Q1 (國際合作) (引用數1)
  56. Ming-Ling Lee, Shih-Ming Chen, Jia-Jie Jhang, Lin-Sin Lu, Shu-Ting Yang, Pin-En Chiu, Yu-Sheng Tsai, Yewchung Sermon Wu, Chin-Chi Cheng, Hsiang Chen, Jung Han, ”Fabrication and Characterizations of PbZrxTi1-xO3 (PZT) Ultrasonic Sensing Chips”, IEEE Access 10, 32453-32460 Mar. (2022). (Impact Factor: 3.467) Q2 (國際合作)
  57. Yu-Sheng Tsai, Jyun-Rong Chen, Chang-Hsueh Lee, Chih-Chen Kuo, Ya-Hsuan Lin, Chun-Chieh Wang, Yu-Cheng Chang, YewChung Sermon Wu, Hsiang Chen,* “Morphologies and material properties of ZnO nanotubes, ZnO/ZnS core-shell nanorods, and ZnO/ZnS core-shell nanotubes,“ Ceramics International 48 (5), 7232-7239 Mar. 2022 (Impact Factor: 4.527) Q1
  58. Y. -F. Tsao, H. -S. Hsu, J. Würfl and H. -T. Hsu, “Dual-Band Power Amplifier Design at 28/38 GHz for 5G New Radio Applications,” in IEEE Access, vol. 10, pp. 77826-77836, 2022. (Impact Factor: 3.476) Q2 (國際合作)
  59. Y. -F. Tsao, A. Desai and H. -T. Hsu, “Dual-Band and Dual-Polarization CPW Fed MIMO Antenna for Fifth-Generation Mobile Communications Technology at 28 and 38 GHz,” IEEE Access, 10, 46853-46863, April, 2022, (Impact Factor: 3.476) Q2 (國際合作)
  60. Meng-Kai Lin, Guan-Hao Chen, Ciao-Lin Ho, Wei-Chen Chueh, Joseph Andrew Hlevyack, Chia-Nung Kuo, Tsu-Yi Fu, Juhn-Jong Lin, Chin Shan Lue, Wen-Hao Chang, Noriaki Takagi, Ryuichi Arafune, Tai-Chang Chiang*, and Chun-Liang Lin*, “Tip-mediated Bandgap Tuning for Monolayer Transition Metal Dichalcogenides”, ACS Nano, 16, 9, 14918–14924 Aug. 2022 (IF: 18.027) Q1(國際合作)
  61. Wan-Hsin Chen, Naoya Kawakami, Jhe-Jhih Lin, Hsiang-I Huang, Ryuichi Arafune, Noriaki Takagi, and Chun-Liang Lin*, “Noncentrosymmetric characteristics of defects on WTe2” Phys. Rev. B 106, 075428, Aug. 2022. (IF: 3.908) Q2(國際合作)
  62. Pratyay Amrit, Naoya Kawakami, Yen-Yu Lai, Ryuichi Arafune, Noriaki Takagi, and Chun-Liang Lin*, ”Scanning Tunneling Microscopy-Based Inelastic Electron Tunneling Spectroscopy Study of the FePc 2D Lattice on Au(111) at 77 K” Phys. Chem. C, 126, 31, 13327, Jul. 2022 (IF: 4.177) Q2(國際合作)
  63. Yi-Chia Chou, Lih-Juann Chen, and King-Ning Tu, “Uphill Diffusion Induced Point Contact Reaction in Si Nanowires”, Nano Lett., 22, 17, 6895–6899, Aug. 2022. (Impact Factor: 12.262) Q1 (國際合作)
  64. Yuan-Wei Chang, Kam-Heng Lam, Chien Chang, Hou-Ren Chen, Kuan-Wei Su, Yi-Chia Chou, “Control of Large Scale Single Phase Ni Silicide Formation from Reactive Multilayers” Eng. Mater., 24: 2200534. Aug. 2022. (Impact Factor: 4.122) Q2
  65. Shih-Jie Lin, Jia-An Lin, Wei Yu, Chanho Lee, Chun-Yu Hung, Jonathan D Poplawsky, Peter K. Liaw, and Yi-Chia Chou, “Biocompatibility of NbTaTiVZr with surface modifications for osteoblasts”, ACS Applied Bio Materials, 5, 2, 642–649, Feb. 2022. (Impact Factor: 3.95) Q2 (國際合作)
  66. Yuan-Wei Chang, Wei-Cih Yang, Wan-Rong Lo, Zheng-Xuan Lo, Chun-Hao Ma, Ying-Hao Chu, and Yi-Chia Chou “Direct Growth of Flexible GaN Film via van der Waals Epitaxy on Mica” Materials Today Chemistry, 26, 101243, September 2022. (Impact Factor: 8.301) Q1
  67. Zefu Zhao, Yu-Rui Chen, Jia-Ren Zou, Jer-Fu Wang, Yun-Wen Chen, Yuxuan Lin, Yifan Xing, W. Liu, and Chenming Hu, “Engineering the HZO Ferroelectric/Anti-Ferroelectric Phase with Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Record High Dielectric Constant,” IEEE Electron Device Letters, 43(4), 553-556, Apr. (2022). (Impact Factor: 4.187) Q1
  68. Yu-Rui Chen, Zefu Zhao, Chien-Te Tu, Yi-Chun Liu, Bo-Wei Huang, Yifan Xing, Guan-Hua Chen, and W. Liu, “ION Enhancement of Ge0.98Si0.02 Nanowire nFETs by High-κ Dielectrics,” IEEE Electron Device Letters, 43, 1601-1604 Oct. 2022. (Impact Factor: 4.187) Q1
  69. Yu-Rui Chen, Bo-Wei Huang, Chun-Yi Cheng, Wan-Hsuan Hsieh, Chung-En Tsai, Chien-Te Tu, Yi-Chun Liu, and W. Liu, “Multi-VT of Stacked GeSn Nanosheets by ALD WNxCy Work Function Metal,” IEEE Transactions on Electron Devices 69, 3611, July, 2022 (Impact Factor: 3.221) Q2
  70. Zefu Zhao, Yu-Rui Chen, Jer-Fu Wang, Yun-Wen Chen, Jia-Ren Zou, Yuxuan Lin, Yifan Xing, W. Liu, Fellow, IEEE, and Chenming Hu, “Engineering Hf0.5Zr0.5O2 Ferroelectric/Anti-ferroelectric Phases with Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constants,” EEE Electron Device Letters, 43, 553, Apr. 2022). (Impact Factor: 4.187) Q1
  71. A. A. Shashkin, M. Yu. Melnikov, V. T. Dolgopolov, M. M. Radonjic´, V. Dobrosavljevic´, S.-H. Huang, C. W. Liu, Amy Y. X. Zhu, and S. V. Kravchenko, “Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system”, Scientific Reports 12, 5080, Mar. 2022 (Impact Factor: 4.997) Q2(國際合作)
  72. Leh-Ping Chang, Jian-Jie Wang, Tzu-Heng Hung, Kuan-Neng Chen, and Fan-Yi Ouyang, “Direct metal bonding using nanotwinned Ag films with (1 1 1) surface orientation under air atmosphere for heterogeneous integration”, Applied Surface Science, 576 (B), 151845, Feb 2022. (Impact Factor: 6.707) Q1
  73. Zhong-Jie Hong, Demin Liu, Han-Wen Hu, Chien-Kang Hsiung, Chih-I Cho, Chih-Han Chen, Ming-Wei Weng, Jui-Han Liu, Mu-Ping Hsu, Ying-Chan Hung, and Kuan-Neng Chen, “Low-temperature hybrid bonding with high electromigration resistance scheme for application on heterogeneous integration”, Applied Surface Science, 610, 155470, Feb. 2023. (Impact Factor: 6.707) Q1
  74. Zhong-Jie Hong, Demin Liu, Han-Wen Hu, Chih-I Cho, Ming-Wei Weng, Jui-Han Liu, and Kuan-Neng Chen, “Investigation of Bonding Mechanism for Low-Temperature Cu-Cu Bonding with Passivation Layer”, Applied Surface Science, 592, 153243, Aug. 2022. (Impact Factor: 6.707) Q1 (cited 3)
  75. S. -W. Tang, B. Bakeroot, Z.-H. Huang, S.-C. Chen, W.-S. Lin, T.-C. Lo, M. Borga, D. Wellekens, N. Posthuma, S. Decoutere, and T.-L. Wu*, “Using Gate Leakage Conduction to Understand Positive Gate Bias induced Threshold Voltage shift in p-GaN gate HEMTs,” IEEE Transactions on Electron Devices (accepted on 2022/12/15). (Impact Factor: 3.221) Q2(國際合作)
  76. S. -W. Tang, W.-S. Lin, Z.-H. Huang, and T.-L. Wu*, “Capacitance-Dependent VTH Instability under a High dVg/dt event in p-GaN Power HEMTs,” IEEE Electron Device Letters, 43, 1617 – 1620, Oct. 2022. (Impact Factor: 4.816) Q1
  77. S. -W. Tang, Z.-H. Huang, S.-C. Chen, W.-S. Lin, B. De Jaeger, D. Wellekens, M. Borga, B. Bakeroot, S. Decoutere, and T.-L. Wu*, “High Threshold Voltage Enhancement-mode Regrown p-GaN gate HEMTs with a Robust Forward Time-Dependent Gate Breakdown Stability,” IEEE Electron Device Letters, 43(10), 1625 – 1628, Oct. 2022. (Impact Factor: 4.816) Q1 (國際合作)
  78. R. Kumar, A. Sarkar, S. Anand, A. Verma, and T.-L. Wu*, ” H-Bridge Derived Topology for Dynamic on-resistance Evaluation in Power GaN HEMTs,” in IEEE Transactions on Industrial Electronics, 70(2), 1532-1541, Feb. 2023 (Impact Factor: 8.126) Q1 (國際合作)
  79. A. Useinov*, D. Jagga, Y. Chang, “Tunnel electroresistance in HZO -based ferroelectric tunnel junctions under hysteresis: approach of the point contact model and linearized Thomas-Fermi screening” ACS Applied Electronic Materials, 4(5), 2238-2245 Apr. 2022. (Impact Factor: 4.494) Q2
  80. S. -J. Chang, S.-Y. Wang, Y.-C. Huang, J.H. Chih, Y.-T. Lai, Y.-W. Tsai, J.-M. Lin, C.-H. Chien, Y.-T. Tang, C. Hu. “Van der Waals epitaxy of 2D h-AlN on TMDs by atomic layer deposition at 250° C”. Applied Physics Letters, 120(16), 162102, Apr. 2022. (Impact Factor: 3.971) Q2
  81. Wu, Chia-Hsing, Yu-Che Huang, Yen-Teng Ho, Shu-Jui Chang, Ssu-Kuan Wu, Ci-Hao Huang, Wu-Ching Chou, and Chu-Shou Yang. 2022. “Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE” Nanomaterials 12, 14: 2435 July 2022. (Impact Factor: 5.719) Q1
  82. Yu-Che Huang, Tung-Chen Hsieh, Tz-Ju Hong, Chia-Hsin Wu, Yen-Teng Ho, Yi-Wei Tsai, Jhih-Min Lin, Hui-Ling Kao, Shu-Jui Chang,” The ultra-thin AlN epitaxy on monolayer WS2 by helicon sputtering at 400 °C”, Vacuum, 207, 111681, 2023 (Available online 17 November) (Impact Factor: 4.11) Q2
  83. Iwan Susanto, Chi-Yu Tsai, Yen-Teng Ho, Ping-Yu Tsai, Ing-Song Yu,”, Enhancement of optical property and crystal structure for GaN films on 2D MoS2 buffer layer by nitridation treatment, ”Surface and Coatings Technology, 434, Feb. (2022) (Impact Factor: 4.16) Q1 (國際合作)
  84. Sheng-Wei Hsiao, Chu-Shou Yang*, Hao-Ning Yang, Chia-Hsing Wu, Ssu-Kuan Wu, Li-Yun Chang, Yen-Teng Ho, Shu-Jui Chang, and Wu-Ching Chou, “A Novel Method for the Growth of Two-Dimensional Layered InSe Thin Films on Amorphous Substrate by Molecular Beam Epitaxy”, Frontiers in Materials 9, 871003 Mar. 2022 (Impact Factor: 3.515) Q2.
  85. P. Huang, M. Y. Chen, Q. H. Luc, J. Y. Wu, N. A. Tran and E. Y. Chang, “Radio Frequency Characteristics of InGaAs FE-FETs With Scaled Channel Length, “IEEE Transactions on Electron Devices, 20 December 2022, doi:10.1109/TED.2022.3228971. (Impact Factor: 3.221) Q2

國際研討會論文

  1. Kuan-Cheng Lu, Chia-Nung Kuo, Chin-Shan Lue, Wen-Bin Jian, Chenming Hu, “Thickness dependent of electric and thermoelectric transport properties in layered material PdSe₂”, 2022 Annual Meeting of the Physical Society of Taiwan, Taipei, Taiwan, Jan 24-26, 2022.
  2. Pen-Yuan Shih, Kuan-Cheng Lu, Yu-Han Lin, Ching-Hwa Ho, Wen-Bin Jian, Chenming Hu, “Laser-writable oxidized 2D TaS2 as high-k gate dielectric for MoS2 FET”, 2022 Annual Meeting of the Physical Society of Taiwan, Taipei, Taiwan, Jan 24-26, 2022.
  3. Y.-C. Luo and P. Su, “Investigation of Intrinsic Ferroelectric Switching induced Variation for Scaled FeFETs considering Limited Domain Number,” 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, April 2022.
  4. Y.-Y. Wang, K.-C. Wang, C.-H. Wu, T.-Y. Chang, N. Ronchi, K. Banerjee, G. Van den Bosch, J. Van Houdt, and T.-L. Wu, “Demonstration of 64 Conductance States and Large Dynamic Range in Si-doped HfO2 FeFETs under Neuromorphic Computing Operations, “International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2022
  5. Y.-S. Liu and P. Su, “Design Space Exploration for Scaled FeFET Nonvolatile Memories: High-k Spacer as a Powerful Aid,” 2022 Electron Devices Technology and Manufacturing Conference (EDTM), Japan, March 2022.
  6. Fang-Chun Shen and Wen-Wei Wu “Observation of Electromigration in Nanotwinned Copper with Different Directions of Electron Flow by In Situ HRTEM,” 2022 MRS Spring Meeting & Exhibit, Hawaii, May 8-13, 2022.
  7. Chia-Jou Liu, Hung-Yang Lo, An-Yuan Hou, Chih-Yang Huang, and Wen-Wei Wu “Revealing Resistive Switching Mechanism in Single Tantalum Oxide nanotube system,” 2022 MRS Spring Meeting & Exhibit, Hawaii, May 8-13, 2022.
  8. Che-Hung Wang, Hung-Yang Lo, Meng-Fu Tsai, Ying-Hao Chu, Ping-Hung Yeh, and Wen-Wei Wu “Investigating Bipolar Resistive Switching Behavior in Single Crystal PbHfO3,” 2022 MRS Spring Meeting & Exhibit, Hawaii, May 8-13, 2022.
  9. Hung-Yang Lo, Jan-Chi Yang and Wen-Wei Wu “Atomic-Scale Investigation of Resistive Switching Behavior in CaFeOx Perovskite Oxide RRAM Device” 2022 MRS Spring Meeting & Exhibit, Hawaii, May 8-13, 2022.
  10. Yen-Jung Chen, Hung-Yang Lo, Jan-Chi Yang and Wen-Wei Wu “Investigation of Resistive Switching Behaviors in LaCoOｘ-Based Resistance Random Access Memory” 2022 MRS Spring Meeting & Exhibit, Hawaii, May 8-13, 2022.
  11. Chia-Ling Liu and Wen-Wei Wu “In Situ Transmission Electron Microscopy Study of Thermal-Induced Dynamic Behavior and Structural Transformation of Atomic-Layer Cr2S3,” 2022 MRS Spring Meeting & Exhibit, Hawaii, May 8-13, 2022.
  12. An-Yuan Hou, Chih-Yang Huang, Yi-Tang Tseng, Hung-Yang Luo, and Wen-Wei Wu “Dynamic observation of garnet type all-solid-state battery lithiation/lithiation process by in-situ TEM,” 2022 MRS Spring Meeting & Exhibit, Hawaii, May 8-13, 2022.
  13. Chien-Hua Wang and Wen-Wei Wu “Electrical properties optimization on resistive switching characteristics in NiO/Nb2O5 bilayer structure RRAM devices,” 2022 MRS Spring Meeting & Exhibit, Hawaii, May 8-13, 2022.
  14. Yen-Jung Chen, Hung-Yang Lo, Jan-Chi Yang, Wen-Wei Wu* “Investigation of Structure Evolution and Oxygen-ion Migration in LaCoOx-Based Resistance Random Access Memory’’ SSDM2022, Chiba Japan, Sep. 26-29, 2022.
  15. Hsin-Ya Sung, Yi-Tang Tseng, Wen-Wei Wu* ” Atomic-scale observation of biased monolayer MoSSe devices via in situ transmission electron microscopy” SSDM2022, Chiba Japan, Sep. 26-29, 2022.
  16. Demin Liu, Kuan-Chun Mei, Han-Wen Hu, Yi-Chieh Tsai, Huang-Chung Cheng, and Kuan-Neng Chen, “Investigation of Low Temperature Co-Co Direct Bonding and Co-Passivated Cu-Cu Direct Bonding,” 2022 IEEE 72th Electronic Components and Technology Conference (ECTC), San Diego, CA, May 31 – Jun. 3, 2022.
  17. Yu-Tao Yang, Haoxiang Ren, Su Kong Chong, Gang Qiu, Shu-Yun Ku, Yang Cheng, Chaowei Hu, Tiema Qian, Kuan-Neng Chen, Ni Ni, Kang L. Wang, and Subramanian S. Iyer, “RF Characterization on Nb-based Superconducting Silicon Interconnect Fabric for future large-scale quantum applications,” 2022 IEEE 72th Electronic Components and Technology Conference (ECTC), San Diego, CA, May 31 – Jun. 3, 2022.
  18. [Invited] Kuan-Neng Chen, “Low Temperature Cu-Cu Hybrid Bonding: The Evolution from 400°C to Near Room Temperature,” 2022 International Conference on Electronics Packaging (ICEP) Conference, Hokkaido, Japan, May 11-14, 2022.
  19. Shih Chi Yang, Chih Chen, Electromigration of Cu-Cu Joints Fabricated by of Highly (111)-oriented Nanotwinned Cu, 2022 TMS Annual Meeting, Anaheim, USA. (March,1-3 2022)
  20. Hsiang Hou Tseng, Chih Chen, Cu-Cu Bonding with Silver Thin Film Capping Layer, 2022 TMS Annual Meeting, Anaheim, USA. (March, 1-3 2022)
  21. Pin-Syuan He, Kai-Cheng Shie, Chih Chen, Low-thermal-budget Hybrid Cu-Cu Bonding with Highly <111>-oriented Nanotwinned Cu and Polyimide, 2022 TMS Annual Meeting, Anaheim, USA. (March 1-3, 2022)
  22. Jia Juen Ong, Kai Cheng Shie, Chih Chen, Thermal Cycling Reliability Tests of Cu-Cu Joints by Two-step Bonding Processes, 2022 TMS Annual Meeting, Anaheim, USA. (March 1-3, 2022)
  23. Shie, K. C., Tran, D. P., Liu, H. C., & Chen, C. (2022). Modeling of Cu-Cu Thermal Compression Bonding. (ECTC, USA.) May 31 – June 3, 2022
  24. Ong, J. J., Tran, D. P., Lin, Y. Y., Hsu, P. N., & Chen, C., Fabrication and Reliability Analysis of Quasi-single Crystal by Using Highly <111>-oriented Nanotwinned Cu. (ECTC, USA.) May 31 – June 3, 2022
  25. Chia-Yi Wu, Ko-Tao Lee, and Yi-Chia Chou, “Electrical Properties and Interfacial Characterization of NiSi2 Nanostructures in Nanowires” 2022 MRS Spring Meeting, Virtual, May 9-24, 2022.
  26. Yi-Fan Tsao, Yuan Wang, Heng-Tung Hsu and Arpan Desai, “Planar Beam Switched Antenna Module for 5G New-Radio FR2 Applications,” 2022 Asia Pacific Microwave Conference, Yokohama, Japan, Nov.29-Dec.2, 2022.
  27. Lin, Yu-Lon; Cheng, Chih-Wei; Chan, Wei-Jen; Huang, Yu-Han; Lin, Yi-Tsung; Huang, Yen-Wei; Chen, Min-Cheng; Chang, Shou-Zen; Chen, Gung; Tseng, Yuan-Chieh, “Field-free CoFeB/Ta/CoFeB SOT Devices Achieved by Modulating Spacer Thickness: Simulation and Experiment, annual conference on magnetism and magnetic materials, 2022 Nov.
  28. Huang, Yu Han; Chen, Hsin Yu; Lin, Jhih Ming; Huang, Yu Shan; Tseng, Yuan-Chieh, “Strong Bulk Spin-orbit Torque Effect Enabled by Microstructural Disordering”, annual conference on magnetism and magnetic materials, 2022 Nov.
  29. Chen, Kuan-Ming; Chang, Yao-Jen; Yang, Shan-Yi; Hsin, Yu-Chen; Rahaman, SK Ziaur; Wang, I-Jung; Lee, Hsin-Han; Su, Yi-Hui; Chen, Guan-Long; Wei, Jeng-Hua; Sheu, Shyh-Shyuan; Lo, Wei-Chung; Wu, Chih-I; Lai, Chih-Huang; Tang, Denny; Tseng, Yuan-Chieh, “Enhancement of Thermal Stability and Switching Efficiency in SOT-MTJs with Antiferromagnetic Channel”, annual conference on magnetism and magnetic materials, 2022 Nov.
  30. Hsin, Tzu-Chuan; Lin, Yu-Lon; Dai, Nien-Yu; Tseng, Yuan-Chieh” Non-volatile Voltage Control of Perpendicular Exchange Bias by Resistive Switching in the Co/NiO/HfO2 Gate Device”, annual conference on magnetism and magnetic materials, 2022 Nov.
  31. Wan-Hsin Chen, Chin-Hsuan Chen, Guan-Hao Chen, Pratyay Amrit, Fu-Xiang Rikudo Chen, Pei-Jung Chen, Chun-Kai Ku, Jia-Ying Li, Wei-Chuan Chen, Iwao Matsuda, ‪Chien-Te Wu, Chung-Yu Mou, Horng-Tay Jeng, Shu-Jung Tang, Chun-Liang Lin “Superconductivity in Plumbene-Au Kagome Superstructure” MolQueST 2022, Ascona, Switzerland, Aug. 21-25, 2022.
  32. M.-C. Lin, C.-T. Fan, S.-W. Tang, T.-L. Wu, and C.-F. Huang, “Novel Topology with Continuous Switching to Comprehensively Characterize Trapping-induced Dynamics in GaN Power Devices,” 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), may 22-25, 2022.
  33. L.-E. Chang, Y.-S. Liu, and P. Su, “Investigation of Interlayer Surface Roughness induced Variation in Scaled 2D Ferroelectric-FET Nonvolatile Memories,” 2022 Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, June 11-12, 2022.
  34. Y.-J. Hsu, Y.-C. Luo, Y.-C. Chen, C.-L. Fan, and P. Su, “Simulation and Investigation of 2D FeFET Synapse with Identical Pulse Scheme for Neuromorphic Applications,” 2022 Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, June 11-12, 2022.
  35. Chia-Yi Wu, Yi-Chia Chou “Electrical Properties and Interfacial Characterization of NiSi2 Nanostructures In Nanowires” MRS Spring Meeting, Virtual, USA, May 23 – 25, 2022.
  36. Chia-Yi Wu, Jia-An Lin, Yi-Chia Chou “Characterization of one-atomic Au layer in NiSi2/Si interface by STEM-EELS” The 4th East-Asia Microscopy Conference (EAMC4), Taipei, Taiwan, Dec. 03 – 05, 2022.
  37. Yi-Chia Chou “Point contact reaction for silicide formation in Si nanowires” HK Tech Forum, Hong Kong/Virtual, September 19 – 20, 2022.
  38. Y. -F. Tsao, Y. Wang, S. Chevtchenko, M. Wolf, J. Würfl and H. -T. Hsu, “Modeling of Hot-Via Technology for System-in-Package at Millimeter-wave Frequencies,” 2022 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2022, pp. 88-89, doi: 10.1109/RFIT54256.2022.9882348. — August, 2022 (國際合作)
  39. Y. -F. Tsao, Y. Wang, H. -T. Hsu and A. Desai, “Planar Beam Switched Antenna Module for 5G New-Radio FR2 Applications,” 2022 IEEE Asia-Pacific Microwave Conference (APMC), 2022. — November, 2022 (國際合作)
  40. Y. -F. Tsao, Y. Wang, P. -H. Chiu and H. -T. Hsu, “A High Survivability Low-Noise Amplifier for V-band Applications,” 2022 IEEE International RF and Microwave Conference (RFM), Kuala Lumpur, Malaysia Dec. 19 – 21, 2022,
  41. Yun-Wen Chen, Yu-Rui Chen, Zefu Zhao, Yifan Xing, Guan-Hua Chen, and C. W. Liu, “Enhanced Ferroelectricity in Hf0.5Zr0.5O2 Thin Film with Amorphous Underlayer,” 53rd IEEE Semiconductor Interface Specialists Conference (SISC 2022). San Diego, CA Dec. 7 – 10, 2022
  42. Yu-Rui Chen, Zefu Zhao, Yun-Wen Chen, Yifan Xing, Yuxuan Lin, Guan-Hua Chen, and C. W. Liu, “Optimizing Oxygen Vacancy and Interface Energy Achieving High Remnant Polarization and Dielectric Constants of Respective Hf0.5Zr0.5O2 Superlattice and Alloy Structure,” 53rd IEEE Semiconductor Interface Specialists Conference (SISC 2022). San Diego, CA Dec. 7 – 10, 2022
  43. Zefu Zhao, Yu-Rui Chen, Yun-Wen Chen, Yifan Xing, Guan-Hua Chen, and C. W. Liu, “Engineering Hf0.5Zr0.5O2 Ferroelectricity with Amorphous WOx Bottom Electrodes Achieving High Remnant Polarization,” 53rd IEEE Semiconductor Interface Specialists Conference (SISC 2022), San Diego, CA Dec. 7 – 10, 2022
  44. Yu-Hao Wu, Yung-Yang Lin, Jeng-Lung Chen, Shih-Yu Fu, Shu-Chi Huang, Chien-Yu Lee, Bo-Yi Chen, Gung-Chian Yin, E-Wen Huang, Mau-Tsu Tang and Bi-Hsuan Lin, “Using nanobeam to mapping the valence state of Eu-doped BaAl2O4 at TPS 23A Nanoprobe”, The official 2022 TWNSS Annual Meeting on Neutron Scattering, Kinmen (Nov. 2022)
  45. Yu-Hao Wu, Bi-Hsuan Lin, E-Wen Huang, “Using & Developing Synchrotron X-ray Nano-beam to Investigate Soft Piezoelectric Materials”, 2022 Symposium of Center for Semiconductor Technology Research, Hsinchu (Nov. 2022)
  46. Yu-Hao Wu, Yung-Yang Lin, Jeng-Lung Chen, Shih-Yu Fu, Shu-Chi Huang, Chien-Yu Lee, Bo-Yi Chen, Gung-Chian Yin, E-Wen Huang, Mau-Tsu Tang and Bi-Hsuan Lin, “Using X-ray nanoprobe to mapping the valence state of Eu-doped BaAl2O4”, 15th International Conference on X-ray Microscopy, Hsinchu 19-24 June 2022.
  47. F.-C. Shen and W.-W Wu*, ” In situ TEM Observation of Electromigration with Different Directions of Electron Flow into High-Density Nanotwinned Copper,” The 4th East-Asia Microscopy Conference (EAMC4), All Virtual, Taiwan, December 3 – 5, 2022.
  48. H.-Y. Sung, Y.-T. Tseng and W.-W. Wu*, ” Atomic-scale observation of monolayer MoSSe devices for biasing via in situ transmission electron microscopy, ” The 4th East-Asia Microscopy Conference (EAMC4), All Virtual, Taiwan, December 3 – 5, 2022.
  49. M.-H. Yang, J.-Y. Chen and W.-W. Wu*, ” Resistive Switching Characteristics in PbSnO3 Perovskite Oxide Memristor, ” The 4th East-Asia Microscopy Conference (EAMC4), All Virtual, Taiwan, December 3 – 5, 2022.
  50. C.-H. Wang and W.-W. Wu*,” Electrical Properties and Switching Behaviors in Nb2O5-based RRAM devices,” The 4th East-Asia Microscopy Conference (EAMC4), All Virtual, Taiwan, December 3 – 5, 2022.
  51. Y.-T. Yeh, and W.-W. Wu*,” In Situ TEM Observation of High-entropy Spinel Oxide Formation During Calcination Process ” The 4th East-Asia Microscopy Conference (EAMC4), All Virtual, Taiwan, December 3 – 5, 2022.
  52. J.-Y. Tsai, H.-Y. Lo, C.-W. Huang, J.-Y. Chen and W.-W. Wu*, ” High-Performance High Entropy Oxide-Based RRAM: Properties and Resistive Switching Mechanism,” The 4th East-Asia Microscopy Conference (EAMC4), All Virtual, Taiwan, December 3 – 5, 2022.
  53. C.-H. Wang and W.-W. Wu* “Revealing Bipolar Resistive Switching Behavior in Single Crystal PbHfO3 Based RRAM Device.” The 4th East-Asia Microscopy Conference (EAMC4), All Virtual, Taiwan, December 3 – 5, 2022.
  54. Y.-J. Chen, J.-C. Yang and W.-W. Wu* “Revealing Structural Evolution in LaCoO3-Based RRAM by Using Advanced STEM,” The 4th East-Asia Microscopy Conference (EAMC4), All Virtual, Taiwan, December 3 – 5, 2022.
  55. Y-J Chen, H-Y Lo, J-C Yang and W-W Wu* “Investigation of Resistive Switching Behaviors in LaCoOx-Based Resistance Random Access Memory” 2022 MRS Spring Meeting & Exhibit, Hawaii, May 8-13, 2022.
  56. Y.-W. Huang, C.-S. Chiu, K.-M. Chen, G.-W. Huang, C.-W. Chuang, C.-W. Lin, and L.-K. Wu, “A low power, wideband low-noise amplifier with current-reused techniques in 0.18-μm CMOS for 5G wireless systems,” 2022 Asia Pacific Microwave Conference, Yokohama, Japan, Nov.29 – Dec.2, 2022.
  57. [Invited] Kuan-Neng Chen, “3D IC and Advanced Packaging,” 2022 IEEE Asian Solid-State Circuit Technology Conference (A-SSCC), Taipei, Taiwan, Nov. 6-9, 2022.
  58. Ming-Wei Weng, Zhong-Jie Hong, Tai-Yu Lin, Han-Wen Hu, and Kuan-Neng Chen, “Investigation of the Effect of Crystallinity on Low-temperature Cu-Cu Bonding with Passivation Layer”, International Electron Devices and Materials Symposium (IEDMS), Nantou, Taiwan, Oct. 27-28, 2022.
  59. Chun-Ta Li, Ming-Chih Chen, Jui-Han Liu, and Kuan-Neng Chen, “Investigation of Room-temperature Adhesive Bonding in 3D Integration and Packaging”, International Electron Devices and Materials Symposium (IEDMS), Nantou, Taiwan, Oct. 27-28, 2022.
  60. [Invited] Kuan-Neng Chen, “Development of Hybrid Bonding, Innovation Applications and Platform for 3DIC,” IMPACT 2022, Taipei, Taiwan, Oct. 26-28, 2022.
  61. R. Kumar, S. Samanta, and T.-L. Wu*, ” Comprehensive Study on Dynamic on-resistance Evaluation Circuit for Power GaN HEMTs Devices,” 48th Annual conference of IEEE Industrial Electronics Society (IECON), Brussels, Oct.17-20, 2022.
  62. B.-Y. Wang, C.-Y. Su, and T.-L. Wu*, ” Demonstration of Patterned GaN RF MIS-HEMTs Growing on  Hybrid Oriented Silicon-on-Insulator (SOI) Substrates,” 80th Device Research Conference (DRC), Columbus, Ohio, June 26-29, 2022
  63. S.-W. Tang, C.-T. Fan, M.-C. Lin, and T.-L. Wu*, ”  Comprehensive Investigation of the Switching Stability in SiC and GaN Power Devices,” 29th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Marina Bay Sands, Singapore, 18th – 21st July, 2022
  64. Y.-S. Liu and P. Su, “Superior Immunity to Trapped-Charge induced Variability in 2D FeFET NVMs,” 2021 Silicon Nanoelectronics Workshop (SNW), All Virtual, Japan, June 13 – 15, 2021.
  65. P.-Y. Lee, Y.-C. Luo, and P. Su*, “Investigation and Mitigation of Write Disturb for 1T FeFET NVM considering Accumulation Effect,” Extended Abstracts of the 2022 International Conf. Solid State Devices and Materials (SSDM), Japan, Sep. 2022.
  66. Ong, J. J, Chen, C, “ Low temperature Cu/SiO2 hybrid bonding fabricated by 2-step process” 2022 ICEP
  67. Ong, J. J, Chen, C, “ Reliability and voids analysis on low temperature nt-Cu/SiO2 hybrid bonding for DRAM applications” 2022 ISMP
  68. Yang, S. C, Chen, C, “Study of Electromigration-induced Failure in Ni/SnAg/Ni Microbumps by 3D X-Ray Laminography ” 2022 ISMP
  69. Hsu, W. Y, Chen, C, “Thermal Stress Distribution in Cu Redistribution Lines Measured by X-ray Nanodiffraction” 2022 ISMP
  70. Shen,G.Y, Chen, C, “Large area Cu-to-Cu Bonding for Heat Pipe Applications” 2022 IMPACT, Taipei, Taiwan, Oct. 26-28, 2022
  71. Huang, J. Y, Chen, C, “Evolution of Interfacial Voids for Nano-Twinned Cu Joint.” 2020, IMPACT, Taipei, Taiwan, Oct. 26-28, 2022
  72. Ong, J. J, Chen, C, “ Low Thermal Budget Cu/SiO2 Hybrid Bonding Using Highly <111>-oriented Nanotwinned Cu with Low Contact Resistivity and High Bonding Strength” 2022 IMPACT, Taipei, Taiwan, Oct. 26-28, 2022
  73. Ong, J. J, Chen, C, “ Interfacial Analysis on Microelectronic Packaging: Voids Observation and Crystallographic Analysis at Bonding Interface on Fine-pitch Cu-Cu Hybrid Joints by Cut-and-view Techniques” 2022 IMPACT, Taipei, Taiwan, Oct. 26-28, 2022
  74. Yang, S. C, Chen, C, “Electromigration of Ni/SnAg/Ni Solder Microbumps at Low Temperature” 2022 IMPACT, Taipei, Taiwan, Oct. 26-28, 2022
  75. Chen, F. C, Chen, C, “High-strength and fine-grained pure copper foils for electronic components” 2022 IMPACT, Taipei, Taiwan, Oct. 26-28, 2022
  76. Y. L. Lin, C. W. Cheng, W. J. Chan, Y. H. Huang, Y. T. Lin, Y. W. Huang, M. C. Chen, S. Z. Chang, G. Chern and Y. C. Tseng, Field-free CoFeB/Ta/CoFeB SOT Devices Achieved by Modulation of Spacer Thickness, 67th Annual Conference on Magnetism and Magnetic Materials, Minnesota, U.S. A, Nov. (2022)
  77. Shivendra K Rathaur, Tsung-Ying Yang, Chih-Yi Yang, Edward Yi Chang, Heng-Tung Hsu, Abhisek Dixit, “Time-dependent Multiple Gate Voltage Reliability of Hybrid Ferroelectric Charge Trap Gate Stack (FEG) GaN HEMT for Power Device Applications”, 2022 IEEE Latin American Electron Devices Conference (LAEDC), Cancun, Mexico, July 04-06, 2022.
  78. Surya Elangovan, Stone Cheng, Jia-Hao Yao, Edward Yi Chang, “VTH & Gm, max Instability Analysis of the Multiple GaN Chips based Cascode Power Module”, 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore, July 18-21, 2022.
  79. Cheng-Wei Chuang, Yueh-Chin Lin, Neng-Da Li, and Edward Yi Chang, “The Influence of Patterned Ohmic Recess Morphology on Gate Controllability with Low Contact Resistance AlGaN/GaN HEMTs”, International Electron Devices & Materials Symposium 2022, Nantou, Taiwan, October 27-28, 2022.
  80. Yueh-Chin Lin, Pin Su, and Edward Yi Chang, “Γ-gate AlGaN/GaN HEMT on SiC Substrate with 8.3W/mm Power Density at 38GHz”, International Electron Devices & Materials Symposium 2022, Nantou, Taiwan, October 27-28, 2022.
  81. Zhong-Jie Hong, Demin Liu, Shu-Ting Hsieh, Han-Wen Hu, Ming-Wei Weng, Chih-I Cho, Jui-Han Liu, and Kuan-Neng Chen, “Room Temperature Cu-Cu Direct Bonding Using Wetting/Passivation Scheme for 3D Integration and Packaging,” 2022 Symposia on VLSI Technology and Circuits, Honolulu, HI, Jun. 12-17, 2022.
  82. X.-R. Yu, W.-H Chang, T.-C. Hong, P.-J. Sung, A. Agarwal, G.-L. Luo, C.-T. Wu, K.-H. Kao, C.-J. Su, S.-W. Chang, W.-H. Lu, P.-Y. Fu, J.-H. Lin, P.-H. Wu, T.-C. Cho, W. C.-Yu. Ma, D.-D. Lu, T.-S. Chao, T. Maeda, Y.-J. Lee, W.-F. Wu, W.-K. Yeh, Y.-H. Wang, “First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering.” VLSI2022
  83. J. Zhang, W. Lu, P.-T. Huang, S.-H. Li, T.-Y. Hung, S.-H. Wu, M.-J. Dai, I-S. Chung, W.-C. Chen, C.-H. Wang, S.-S. Sheu, H.-M Chen, K.-N. Chen, W.-C. Lo and C.-I Wu, ” An Embedded Multi-Die Active Bridge (EMAB) Chip for Rapid-Prototype Programmable 2.5D/3D Packaging Technology,” IEEE Symposium on VLSI circuits, 2022.
  84. J.-S. Wu, P.-H. Liao, S.-J. Chang, T.-Y. Yang, C.-Y. Teng, Y.-K. Liang, D. Panda, Q. H. Luc, and E. Y. Chang, “Superior Breakdown, Retention, and TDDB Lifetime for Ferroelectric Engineered Charge Trap Gate E-mode GaN MIS-HEMT”, 68th Annual IEEE International Electron Devices Meeting (IEEE IEDM 2022), San Francisco, USA December 3-7, 2022
  85. X.-R. Yu, M.-H. Chuang, S.-W. Chang, W.-H. Chang, T.-C. Hong, C.-H. Chiang, W.-H. Lu , C.-Y. Yang, W.-J. Chen, J.-H. Lin, P.-H. Wu, T.-C. Sun, S. Kola, Y.-S. Yang, Yun Da, P.-J. Sung, C.-T. Wu, T.-C. Cho, G.-L. Luo, K.-H. Kao, M.-H. Chiang, W. C.-Y. Ma, C.-J. Su, T.-S. Chao, T. Maeda, S. Samukawa, Y. Li, Y.-J. Lee, W.-F. Wu, J.-H. Tarng, Y.-H. WangIntegration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size” IEDM 2022
  86. C.-Y. Yang, P.-J. Sung, M.-H. Chuang, C.-W. Chang, Y.-J. Shih, T.-Y. Huang, D. D. Lu, T.-C. Hong, X.-R. Yu, W.-H. Lu, S.-W. Chang, J.-J. Tsai, M.-K. Huang, T.-C. Cho, Y.-J. Lee, K.-L. Luo, C.-T. Wu, C.-J. Su, K.-H. Kao, T.-S. Chao, W.-F. Wu, Y.-H. Wang, “First Demonstration of Heterogeneous L-shaped Field Effect Transistor (LFET) for Angstrom Technology Nodes.” IEDM 2022
  87. Y.-C. Chen, K.-Y. Hsiang, M.-H. Lee, and P. Su*, “Monte-Carlo Modeling and Characterization of Switching Dynamics for Antiferroeletric/Ferroelectric HZO considering Mechanisms of Fatigue,” 2022 International Electron Devices Meeting (IEDM), San Francisco, USA, Dec. 2022.