2020中心學術成果發表

1.期刊論文

  1. Kuan-Bo Lin, Yen-Hsun Su*, and Chao-Cheng Kaun*, “Interfacial effects on leakage currents in Cu/α-cristobalite/Cu junctions”, Scientific Reports, 10, 5303 Dec. (2020) (Impact Factor: 4.12). Q1
  2. S.-E. Huang, S.-H. Lin, and P. Su, “Investigation of Inversion Charge Characteristics and Inversion Charge Loss for InGaAs Negative-Capacitance Double-Gate FinFETs Considering Quantum Capacitance,” IEEE Journal of the Electron Devices Society, vol. 8, pp. 105-109, Jan. (2020). (Impact Factor: 2.17) Q2
  3. W.-X. You, P. Su and C. Hu, “A New 8T Hybrid Nonvolatile SRAM with Ferroelectric FET,” IEEE Journal of the Electron Devices Society, vol. 8, pp. 171-175, Feb. (2020). (Impact Factor: 2.17) Q2
  4. Y.-S. Liu and P. Su, “Variability Analysis for Ferroelectric FET Nonvolatile Memories Considering Random Ferroelectric-Dielectric Phase Distribution,” IEEE Electron Device Letters, vol. 41, no. 3, pp. 369-372, March (2020). (Impact Factor: 4.02) Q1
  5. Y.-W. Chen, S.-T. Fan, and C. W. Liu, “Energy preference of single-domain polarization switching for HfO2 by first-principle study”, J. Phys. D: Appl. Phys, 54(8), pp. 085304, Dec. (2020). (Impact Factor: 3.17) Q2
  6. A. Shashkin, M. Yu. Melnikov, V. T. Dolgopolov, M. M. Radonjić, V. Dobrosavljević, S. -H. Huang, C. W. Liu, Amy Y. X. Zhu, and S. V. Kravchenko, “Manifestation of strong correlations in transport in ultraclean SiGe/Si/SiGe quantum wells,” Rapid Communication in Physical Review B, 102(8), pp. 081119(R), Aug. (2020). (Impact Factor: 3.58) Q2(國際合作)
  7. S.-T. Fan, Y.-W. Chen, and C. W. Liu, “Strain effect on the stability in ferroelectric HfO2 simulated by first-principles calculations”, J. Phys. D: Appl. Phys, 53(23), pp. 23LT01, Apr. (2020). (Impact Factor: 3.17) Q2
  8. Sujit Kumar, Anjali Sharma, Yen Teng Ho, Akhilesh Pandey, Monika Tomar, AK Kapoor, Edward Yi Chang, Vinay Gupta, “High performance UV photodetector based on MoS2 layers grown by pulsed laser deposition technique”, Journal of Alloys and Compounds, 835, 155222 (2020). (Impact Factor: 4.35) Q1 (國際合作)
  9. Min-Lu Kao, Huu Minh Thien Ha, Yuan Lin, Weng You-Chen, Heng-Tung Hsu, Edward Yi Chang, “Enhancement of the electron transport properties of InAlGaN/AlN/GaN HEMTs on silicon substrate with GaN insertion layer”, Applied Physics Express 13, 065501 April (2020). (Impact Factor: 3.08) Q2
  10. Venkatesan Nagarajan, Kun-Ming Chen, Bo-Yuan Chen, Guo-Wei Huang, Chia-Wei Chuang, Chuang-Ju Lin, Deepak Anandan, Chai-Hsun Wu, Ping-Cheng Han, Sankalp Kumar Singh, Tien-Tung Luong, Edward Yi Chang, “Study of Charge Trapping Effects on AlGaN/GaN HEMTs under UV Illumination with Pulsed IV Measurement”, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 20, 436 – 441, JUNE 2020. (Impact Factor:1.79) Q3
  11. Venkatesan Nagarajan, Kun-Ming Chen, Hsin-Yi Lin, Hsin-Hui Hu, Guo-Wei Huang, Edward Yi Chang, “Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination”, IEEE TRANSACTIONS ON NANOTECHNOLOGY, 19, 405 – 409 (2020). (Impact Factor:2.35) Q2
  12. Sankalp Kumar Singh, Pragyey Kumar Kaushik, Ramesh Kumar Kakkerla, Ankur Gupta, Deepak Anandan, Venkatesan Nagarajan, Hung Wei Yu, Edward Yi Chang, “Small signal model and RF performance analysis of InAs/GaSb hetero-junction tunneling field effect transistor”, Eng. Res. Express 2 July (2020) 035004.(Impact Factor:1.41) Q3
  13. Tian-Li Wu and S. Kutub, “Machine Learning-Based Statistical Approach to Analyze Process Dependencies on Threshold Voltage in Recessed Gate AlGaN/GaN MIS-HEMTs,” IEEE Transactions on Electron Devices, 67, 12, 5448-5453, Dec. 2020. (Impact Factor: 2.97) Q2
  14. Sharma, R. Singh, D.-S. Chao, and Tian-Li Wu, “Effects of γ -Ray Irradiation on AlGaN/GaN Heterostructures and High Electron Mobility Transistor Devices,” Journal of Electronic Materials, 2020. (Impact Factor: 1.66) Q3 (國際合作)
  15. Modolo, S.-W. Tang, H.-J. Jiang, C. Santi, M. Meneghini, and Tian-Li Wu, “A novel physics-based approach to analyze and model E-mode p-GaN power HEMTs,” IEEE Transactions on Electron Devices, published on line in May,  doi: 10.1109/TED.2020.2992587. (Impact Factor: 2.97) Q1 (國際合作)
  16. Y.-H. Chen, Chun-Jung Su, T.-H. Yang, Chenming Hu, and Tian-Li Wu, “Improved TDDB Reliability and Interface States in 5 nm Hf0.5Zr0.5O2 Ferroelectric Technologies using NH3 Plasma and Microwave Annealing,” IEEE Transactions on Electron Devices, 67, 4, 1581-1585, Apr. 2020. (Impact Factor: 2.97) Q2(國際合作)
  17. Tian-Li Wu, S.-W. Tang, and H.-J. Jiang, “Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-mode Characteristic,” Micromachines, 11, 2, 163, Feb. 2020. (Impact Factor: 2.524) Q2
  18. Sharma, N. Modolo, Tian-Li Wu, M. Meneghini, G. Meneghesso, E. Zanoni, A. Kumar Visvkarma, S. Vinayak, and R. Singh, “Understanding γ ray Induced Instability in AlGaN/GaN HEMTs using a Physics based Compact Model,” IEEE Transactions on Electron Devices, 67, 3, 1126-1131, Mar. 2020. (Impact Factor: 2.97) Q2 (國際合作)
  19. T.-H. Yang, Chun-Jung Su, Y.-S. Wang, K.-H. Kao, Y.-J. Lee, and Tian-Li Wu, “Impact of the Polarization on Time-Dependent Dielectric Breakdown in Ferroelectric Hf0.5Zr0.5O2 on Ge Substrates,” Japanese Journal of Applied Physics, 59, SGGB08, 2020. (Impact Factor: 1.52) Q3
  20. Mengjiao Li, Feng‐Shou Yang, Hung‐Chang Hsu, Wan‐Hsin Chen, Chia Nung Kuo, Jiann‐Yeu Chen, Shao‐Heng Yang, Ting‐Hsun Yang, Che‐Yi Lin, Yi Chou, Mu‐Pai Lee, Yuan‐Ming Chang, Yung‐Cheng Yang, Ko‐Chun Lee, Yi‐Chia Chou, Chen‐Hsin Lien, Chun‐Liang Lin, Ya‐Ping Chiu, Chin Shan Lue, Shu‐Ping Lin, Yen‐Fu Lin “Defect Engineering in Ambipolar Layered Materials for Mode‐Regulable Nociceptor” Adv. Func. Mater. 2007587, 2020. (IF: 15.621) Q1
  21. Chanho Lee, Yi Chou, George Kim, Michael C. Gao, Ke An, Jamieson Brechtl, Chuan Zhang, Wei Chen, Jonathan D. Poplawsky, Gian Song, Yang Ren, Yi-Chia Chou, Peter K. Liaw “Lattice-Distortion-Enhanced Yield Strength in a Refractory High-Entropy Alloy” Advanced Materials, 2004029, 2020. (IF: 25.809) Q1 (國際合作)
  22. Chang-Hsun Huang, Yi-Chia Chou “Achieving Ultra-Long GaN Nanorod Growth by Lowering Nucleation Energy via Surface Modification for Optical Sensors” ACS Appl. Nano Mater. 3, 9, 8949–8957, 2020.(尚未有Impact Factor)
  23. Chanho Lee, George Kim, Yi Chou, Brianna L. Musicó, Michael C. Gao, Ke An, Gian Song, Yi-Chia Chou, Veerle Keppens, Wei Chen, and Peter K. Liaw “Temperature Dependence of Elastic and Plastic Deformation Behavior of a Ductile Refractory High-entropy Alloy” Science Advances 6, 4748, 2020. (IF: 12.804) Q1 (國際合作)
  24. Jiyue Wu, Haibin Zhang, Chang-Hsun Huang, Chiao-Wei Tseng, Nan Meng, Vladimir Koval, Yi-Chia Chou, Zhen Zhang, Haixue Yan “Ultrahigh Field-Induced Strain in Lead-Free Ceramics” Nano Energy 76, 105037, 2020. (IF: 15.548) Q1 (國際合作)
  25. YewChung Sermon Wu*, Tung-Yen Lai, Meiyi Li, Tsan-Feng Lu, Yu Hsiang Wang, and Tzu Yen Tseng (2020, Dec). “Bonding Mechanisms of Roughened Nanotwinned-Cu Surface at Temperature as Low as 120°C”. ECS J. Solid State Sci. Technol. 9 124005. Dec.(2020). (Impact Factor: 1.79) Q3
  26. Wen-Yang Hsu, Yen-Ting Kuo, Shang-Shih Hung, Pei-Yu Wu,1 Jinn-Kong Sheu, Kun-Lin Lin, and YewChung Sermon Wu* ” Suppressing the Initial Growth of Sidewall GaN by Modifying AlN-Coated Patterned Sapphire with KOH-Based Etchant,” ECS Journal of Solid State Science and Technology, 9(1) , 016012. Oct. (2020) (Impact Factor: 1.79) Q3
  27. Che-Chi Shih, Ming-Huei Huang, Chi-Kai Wan, Wen-Bin Jian,* Kimitoshi Kono, Yen-Fu Lin, Ching-Hwa Ho, “Tuning Interface Barrier in 2D BP/ReSe2 Heterojunctions in Control of Optoelectronic Performances and Energy Conversion Efficiencies”, ACS Photonics 7(10), 2886-2895 (2020). (Impact Factor:7.14) Q1(國際合作)
  28. Ranjit A. Patil, Hao-Wei Tu, Ming-Hsing Jen, Jing-Jia Lin, Ching-Cherng Wu, Chun-Chuen Yang, Duy Van Pham, Chih-Hung Tsai, Chien-Chih Lai, Yung Liou, Wen-Bin Jian,* Yuan-Ron Ma,* “Intriguing field-effect-transistor performance of two-dimensional layered and crystalline CrI3”, Materials Today Physics 12, 100174 (2020). (Impact Factor: 10.443) Q1
  29. Kai Cheng Shie*, Jing-Ye Juang, and Chih Chen, Instant Cu-to-Cu direct bonding enabled by 〈111〉-oriented nanotwinned Cu bumps, Japanese Journal of Applied Physics 59, SBBA03 (2020) (Impact Factor: 1.52) Q3
  30. Y.T. Wu* and Chih Chen, Low Temperature Cu-to-Cu Bonding in Non-vacuum Atmosphere with Thin Gold Capping on Highly (111) Oriented Nanotwinned Copper, Journal of Electronic Materials, 49(1), 13-17, 2020(Impact Factor: 1.66) Q3
  31. I.J. Wang*, C.S. Ku, T.N. Lam, E.W. Huang, K.N. Tu, and Chih Chen*, Tuning Stress in Cu Thin Films by Developing Highly (111)-Oriented Nanotwinned Structure, Journal of Electronic Materials, 49(1), 109-115, 2020. (Impact Factor: 1.66) Q3
  32. Tien-Lin Lu*, Yu-An Shen, John A. Wu and Chih Chen*, Anisotropic Grain Growth in (111) Nanotwinned Cu Films by DC Electrodeposition, Materials 13, 134 (2020). (Impact Factor: 3.24) Q2
  33. A.M. Gusak*, K.N. Tu, Chih Chen, Extremely rapid grain growth in scallop-type Cu 6 Sn 5 during solid–liquid interdiffusion reactions in micro-bump solder joints, Scripta Materialia 179, 45–48.April (2020) (Impact Factor: 5.07) Q1(國際合作)
  34. Tien-Lin Lu*, John A. Wu, and Chih Chen*, Fabrication and Characterization of ⟨100⟩-Oriented Quasi-single Crystalline Cu Lines, Crystal Growth & Design., 20, 1485-1490 (2020). (Impact Factor: 4.15) Q1
  35. Yu-Jin Li*, King-Ning Tu and Chih Chen, Tensile Properties and Thermal Stability of Unidirectionally <111>-Oriented Nanotwinned and <110>-Oriented Microtwinned Copper, Materials 2020, 13, 1211 (Impact Factor: 3.24) Q2
  36. Yu-Jin Li*, King-Ning Tu and Chih Chen, Tensile Properties of <111>-Oriented Nanotwinned Cu with Different Columnar Grain Structures, Materials 2020, 13, 1310; doi:10.3390/ma13061310. (Impact Factor: 3.24) Q2
  37. Kuan-Ju Chen*, Jui-Yuan Chen, Yi-Hsin Ting, Wen-Wei Wu, Chih Chen∗, Ultra-high annealing twin density in <211>-oriented Cu films, Scripta Materialia, 184, 46-51 (2020). (Impact Factor: 5.07) Q1
  38. Kuan-Ju Chen*, John A. Wu, Chih Chen*, Effect of reverse currents during electroplating on the <111>-oriented and nanotwinned columnar grain growth of copper films, Crystal Growth & Design. May 2020, 20, 6, 3834–3841. (Impact Factor: 4.17) Q1
  39. Chih-Han Tseng*, I-Hsin Tseng, Yu-Pei Huang, Yun-Ting Hsu, Jihperng Leu, K. N. Tu and Chih Chen, Kinetic Study of Grain Growth in highly (111)-preferred Nanotwinned Copper Films, Materials Characterization, 168 (2020) 110545. (Impact Factor: 3.43) Q1
  40. Yu-Jin Li*, Chia-Wei Hsu, Yi-Hsin Ting, Nien-Ti Tsou, Yu-Chieh Lo, Wen-Wei Wu, K. N. Tu, Chih Chen, Deformation induced columnar grain rotation in nanotwinned metals. Materials Science & Engineering A, 797 (2020) 140045. (Impact Factor: 4.65) Q1
  41. Wei-Lan Chiu*, Chien-Min Liu, Han-wen Lin, John A. Wu, Y.-C. Chou, K. N. Tu, and Chih Chen, Fabrication and characteristics of highly <110>-oriented nanotwinned Au films, Scientific Reports 10:16566 (2020). (Impact Factor: 4.12) Q1
  42. Chun-Liang Lin*, Naoya Kawakami, Ryuichi Arafune, Emi Minamitani and Noriaki Takagi, “Scanning tunneling spectroscopy studies of topological materials” J. Phys.: Condens. Matter, 32, 243001 (2020) (Impact Factor: 2.97) Q2(國際合作)
  43. Mengjiao Li, Feng‐Shou Yang, Hung‐Chang Hsu, Wan‐Hsin Chen, Chia Nung Kuo, Jiann‐Yeu Chen, Shao‐Heng Yang, Ting‐Hsun Yang, Che‐Yi Lin, Yi Chou, Mu‐Pai Lee, Yuan‐Ming Chang, Yung‐Cheng Yang, Ko‐Chun Lee, Yi‐Chia Chou, Chen‐Hsin Lien, Chun‐Liang Lin, Ya‐Ping Chiu, Chin Shan Lue, Shu‐Ping Lin, Yen‐Fu Lin “Defect Engineering in Ambipolar Layered Materials for Mode-Regulable Nociceptor” Adv. Funct. Mater. 2020, 2007587 (2020) (Impact Factor: 16.84) Q1
  44. Kai-Wen Chen, Shu-Jui Chang, Ethan Ying-Tsan Tang, Chih-Pin Lin, Tuo-Hung Hou, Chia-Hao Chen, and Yuan-Chieh Tseng* “Pulse-Mediated Electronic Tuning of the MoS2–Perovskite Ferroelectric Field Effect Transistors” ACS Appl. Electron. Mater, 2, 3843 (2020).(Impact Factor 尚未公布)
  45. J. Lin, C. Y. Teng, S. J. Chang, Y. F. Liao, C. M. Hu, C. J. Su*, and Y. C. Tseng*, ”Role of electrode-induced oxygen vacancies in regulating polarization wake-up in ferroelectric capacitors”, Applied Surface Science, 528, 147014 (2020). (Impact Factor: 6.182) Q1
  46. M. Chen, C. W. Chang, J. H. Wei, Y. C. Hsin, and Y. C. Tseng*, “Effects of synthetic antiferromagnetic coupling on back-hopping of spin-transfer torque devices”, Applied Physics Letters 117, 072405 (2020).(Impact Factor: 3.597) Q1
  47. Tzu-Ning Chen, Jui-Cheng Kao, Xin-Yan Zhong, Shang-Ju Chan, Anindya S Patra, Yu-Chieh Lo*, Michael H Huang, “Facet-Specific Photocatalytic Activity Enhancement of Cu2O Polyhedra Functionalized with 4-Ethynylanaline Resulting from Band Structure Tuning,” ACS Central Science, 6, 984 (2020) (Impact Factor: 12.837) Q1
  48. Tzu-Chieh Chou, Kai-Ming Yang, Jian-Chen Li, Ting-Yang Yu, Yu-Tao Yang, Han-Wen Hu, Yu-Wei Liu, Cheng-Ta Ko, Yu-Hua Chen, Tzyy-Jang Tseng, and Kuan-Neng Chen, “Investigation of Pillar-Concave Structure for Low Temperature Cu-Cu Direct Bonding in 3D/2.5D Heterogeneous Integration”, IEEE Transactions on Components, Packaging and Manufacturing Technology, 10(8), 1296-1303, Aug. 2020. (Impact Factor: 2.31) Q3
  49. Yi-Chieh Tsai, Han-Wen Hu, and Kuan-Neng Chen, “Low Temperature Copper-Copper Bonding of Non-Planarized Copper Pillar with Passivation”, IEEE Electron Devices Letters, 41(8), 1229-1232, Aug. 2020. (Impact Factor: 4.02) Q1
  50. Yi-Lun Yang, Hiroyuki Ito, Young Suk Kim, Takayuki Ohba, and Kuan-Neng Chen, “Evaluation of Metal/Polymer Adhesion and Highly Reliable Four-Point Bending Test Using Stealth Dicing Method in 3-D Integration”, IEEE Transactions on Components, Packaging and Manufacturing Technology, 10(6), pp. 956-962, Jun. 2020. (Impact Factor: 2.31) Q3 (國際合作)
  51. Cheng-Hsien Lu, Yi-Lun Yang, Chiao-Pei Chen, Bin-Ling Tsai, and Kuan-Neng Chen, “Adhesion Properties of Electroplating Process Between Polyimide and Metal Layer for Polymer/Metal Hybrid Bonding”, IEEE Transactions on Components, Packaging and Manufacturing Technology, 10(1), 168-175, Jan. 2020. (Impact Factor: 2.31) Q3
  52. Chih-Yang Huang, Kuo-Lun Tai, Chun-Wei Huang, Yi-Tang Tseng, Hung-Yang Lo, and Wen-Wei Wu* “Dynamic observation on the functional metal oxide conversion behaviors in Fe3O4/ZnO heterostructures,’’ Scr. Mater., 177, 192-197 (2020). (Impact Factor: 5.079) Q1
  53. Guan-Min Huang, Chun-Wei Huang, Nagesh Kumar, Chih-Yang Huang, Tseung-Yuen Tseng, and Wen-Wei Wu* “In situ TEM investigation of electron beam-induced ultrafast chemical lithiation for charging’’ J. Mater. Chem. A, 8, 648-655 (2020). (Impact Factor: 11.301) Q1
  54. Yi-Hsin Ting, Chun-Wei Huang, Akira Yasuhara, Sheng-Yuan Chen, Jui-Yuan Chen, Li Chang, Kuo-Chang Lu, and Wen-Wei Wu* “Atomic Imaging of Molybdenum Oxide Nanowires with Unique and Complex Periodicity by Advanced Electron Microscopy’’ Nano Lett., 20, 3, 1510-1516 Dec. (2020). (Impact Factor: 11.238) Q1
  55. Chih-Yang Huang, Yi-Tang Tseng, Hung-Yang Lo, Jeng-Kuei Chang, and Wen-Wei Wu* “In situ atomic scale investigation of Li7La3Zr2O12-based Li+-conducting solid electrolyte during calcination growth’’ Nano Energy, 71, 104625 May (2020). (Impact Factor: 16.602) Q1
  56. Hung-Yang Lo, Chih-Yu Yang, Guan-Ming Huang, Chih-Yang Huang, Jui-Yuan Chen, Chun-Wei Huang, Ying-Hao Chu, and Wen-Wei Wu* “Observing Topotactic Phase Transformation and Resistive Switching Behaviors in Low Power SrCoOx Memristor’’ Nano Energy, 72, 104683 June (2020). (Impact Factor: 16.602) Q1
  57. Yi-Tang Tseng, Kuo Lun Tai, Chun-Wei Huang, Chih-Yang Huang, and Wen-Wei Wu* “Atomic-Scale Localized Thinning and Reconstruction of 2D WS2 Layers through In situ TEM/STEM’’ J. Phys. Chem. C, 124(27), 14935-14940 June (2020). (Impact Factor: 4.189) Q1
  58. Jui-Yuan Chen, Min-Ci Wu, Yi-Hsin Ting, Wei-Che Lee, Ping-Hung Yeh, and Wen-Wei Wu* “Applications of p-n homojunction ZnO nanowires to one-diode one-memristor RRAM arrays’’ Scr. Mater., 187, 439-444 April (2020). (Impact Factor: 5.079) Q1
  59. Kuo-Lun Tai, Jun Chen, Yi Wen, Hyoju Park, Qianyang Zhang, Yang Lu, Ren-Jie Chang, Peng Tang, Christopher S. Allen, Wen-Wei Wu*, and Jamie H. Warner* “Phase Variations and Layer Epitaxy of 2D PdSe2 Grown on 2D Monolayers by Direct Selenization of Molecular Pd Precursors’’ ACS nano, 14(9), 11677–11690 Aug. (2020). (Impact Factor: 14.588) Q1(國際合作)
  60. Chun‐Yen Lai, Yu‐Ting Lin, Hung‐Kun Hsu, Ding‐Yeong Wang, Wen-Wei Wu*, Ping‐Hung Yeh* “Enhancement in the Detection Ability of Metal Oxide Sensors Using Defect‐Rich Polycrystalline Nanofiber Devices’’ Global Challenges, 2000041 Sep. (2020). (Impact Factor: 4.306) Q1
  61. An-Yuan Hou, Yi-Hsin Ting, Kuo-Lun Tai, Chih-Yang Huang, Kuo-Chang Lu, Wen-Wei Wu* “Atomic-scale silicidation of low resistivity Ni-Si system through in-situ TEM investigation’’ Appl. Surf. Sci., 538, 148129 (2021). (Impact Factor: 6.182) Q1 (available on line in Oct.)
  62. Hsin-Mei Lu, Chih-Yang Huang, Guan-Ming Huang, Kuo-Chang Lu, Wen-Wei Wu* “In-situ Transmission Electron Microscope Investigation of Atomic-scale Titanium Silicide Monolayer Superlattice’’ Scr. Mater., 193, 6-11 (2021). (Impact Factor: 5.079) Q1 (available on line in Oct.)
  63. Caifang Gao, Mu‐Pai Lee, Mengjiao Li, Ko‐Chun Lee, Feng‐Shou Yang, Che‐Yi Lin, Kenji Watanabe, Takashi Taniguchi, Po‐Wen Chiu, Chen‐Hsin Lien, Wen-Wei Wu, Shu‐Ping Lin*, Wenwu Li*, Yen‐Fu Lin*, Junhao Chu* “Mimic Drug Dosage Modulation for Neuroplasticity based on Charge‐Trap Layered Electronics’’ Adv. Funct. Mater., 2005182 Nov. (2020). (Impact Factor: 16.836) Q1(國際合作)
  64. Shin-Bei Tsai, Jui-Yuan Chen, Chih-Yang Huang, Szu-Yu Hou, and Wen-Wei Wu* “Observing Growth and Crystallization of Au@ZnO Core-Shell Nanoparticles by In Situ Liquid Cell Transmission Electron Microscopy: Implications for Photocatalysis and Gas Sensing Applications’’ ACS Appl. Nano Mater., Accepted (2020). Q1(尚未公布IF)
  65. Yi-Fan Tsao, Joachim Würfl, and Heng-Tung Hsu*, “Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks,” Electronics, 9(2), 270. Feb. 2020, (Impact Factor: 2.412) Q2 (國際合作)
  66. Y.C. Lin, S.H. Chen, P.H. Lee, K.H. Lai, T. J. Huang, Edward Y. Chang, and Heng-Tung Hsu*, “Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications”, Micromachines, 11(2), 222. Feb.2020 (Impact Factor: 2.524) Q2
  67. Tso-Jung Chang, Krishna Pande, and Heng-Tung Hsu*, “Novel Low-Cost Power Divider for 5.8 GHz,” Electronics, 9(4) 699. April 2020 (Impact Factor: 2.20) Q2
  68. Chien-Ming Tsao, Yi-Fan Tsao, Tzu-Shuen Lin, Ting-Jui Huang, and Heng-Tung Hsu*, “Compact low-noise power amplifier design and implementation for millimetre wave frequencies,” IET Circuits, Devices & Systems, Volume 14, Issue 7, p. 1026-1031 Nov. 2020. (Impact Factor: 1.49) Q3
  69. Y.-F. Tsao and H.-T. Hsu*, “A 52-58 GHz Power Amplifier with 18.6-dBm Saturated Output Power for Space Applications”, IEEE Transactions on Circuits and Systems II: Express Briefs, accepted (DOI: 10.1109/TCSII.2020.3043343), December 2020. (Impact Factor: 3.43) Q2
  70. Tso-Jung Chang, Yi-Fan Tsao, Ting-Jui Huang, and Heng-Tung Hsu*, “Bandwidth Improvement of Conventional Dual-band Power Divider Using Physical Port Separation Structure,” Electronics 2020, 9(12), 2192 Dec. 2020. (Impact Factor: 2.412) Q2
  71. Hobyung Chae, E-Wen Huang*, Wanchuck Woo, Suk Hoon Kang, Jayant Jain, Ke An, Soo Yeol Lee*: Unravelling thermal history during additive manufacturing of martensitic stainless steel, Journal of Alloys and Compounds, 157555 (2020) (Impact Factor: 4.65) Q1(國際合作)
  72. Tu-Ngoc Lam, Szu-Chien Wu, Hobyung Chae, Shi-Wei Chen, Jayant Jain, Soo Yeol Lee, Ke An, Sven C. Vogel, Sung-Mao Chiu, Dunji Yu and E-Wen Huang*: Phase Stress Partition in Gray Cast Iron Using in-situ Neutron Diffraction Measurements. Metallurgical and Materials Transactions A 51 (10), 5029-5035 (2020) (Impact Factor: 1.874) Q2(國際合作)
  73. Jo-Chi Tseng*, Wei-Chin Huang, Wei Chang, Arno Jeromin, Thomas F. Keller, Jun Shen, Andrew Chihpin Chuang, Chun-Chieh Wang, Bi-Hsuan Lin, Lia Amalia, Nien-Ti Tsou, Shao-Ju Shih, and E-Wen Huang*: Deformations of Ti-6Al-4V additive-manufacturing-induced isotropic and anisotropic columnar structures: In situ measurements and underlying mechanisms. Additive Manufacturing 35, 101322 (2020). (Impact Factor: 7.002) Q1(國際合作)
  74. Gokhale, T. Meena, S.Y. Lee, E-Wen Huang, N.N. Gosvami, S.K. Sinha, J. Jain*, Nanowear Mechanisms of Mg Alloyed with Al and Y at Elevated Temperatures, Tribology Letters 68(1) (2020) 1-8. (Impact Factor: 1.891) Q2(國際合作)
  75. Tu-Ngoc Lam, Minh-Giam Trinh, Chih-Chieh Huang, Pei-Ching Kung, Wei-Chin Huang, Wei Chang, Lia Amalia, Hsu-Hsuan Chin, Nien-Ti Tsou, Shao-Ju Shih, San-Yuan Chen, Chun-Chieh Wang, Pei-I Tsai, Meng-Huang Wu, E-Wen Huang*: Investigation of bone growth in additive-manufactured pedicle screw implant by using Ti-6Al-4V and bioactive glass powder composite, International Journal of Molecular Sciences 21 (20), 7438 (2020) (Impact Factor: 4.556) Q1 (國際合作)
  76. Vitaly Gurylev*, Tzu-Kang Chin, Artur Useinov, “Charge transfer and field emission characteristics of TiO2@CNTs nanocomposite: Effect of TiO2 crystallinity” Journal of Alloys and Compounds, (2020) pp.157598
    (Impact Factor: 4.65) (Avail. online 21 Oct. 2020) Q1
  77. Useinov* , H.-H. Lin, N. Useinov, L. Tagirov, “Mathematical Description Data: Spin-Resolved Electron Transport in Nanoscale Heterojunctions. Theory and Applications” Data in Brief, Available online: 1 Sept. (2020), pp. 106233, (Impact Factor: 0.97) Q2(國際合作)
  78. Useinov*, H.-H. Lin, N. Useinov, L. Tagirov, “Spin-resolved electron transport in nanoscale heterojunctions. Theory and applications” Journal of Magnetism and Magnetic Materials 508 (2020) pp. 166729. (Impact Factor: 2.7) Q2(國際合作)
  79. Po-Jung Sung, S.-W. Chang, K.-H. Kao, C.-T. Wu, C.-J. Su, F.-K. Hsueh, W.-H. Lee, Yao-Jen Lee*, and T. S. Chao,” Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for CMOS and CFET inverters,” IEEE Trans. on Electron Devices, 67, pp.3504-3509. Sept. 2020. (Impact Factor: 2.97) Q2
  80. Po-Jung Sung, Chun-Jung Su, Shih-Hsuan Lo, Fu-Kuo Hsueh, Darsen D. Lu, Yao-Jen Lee*, and Tien-Sheng Chao,” Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter,” IEEE Journal of the Electron Devices Society, vol. 8, pp.474-480. Apr. 2020. (Impact Factor: 2.17) Q2

2.國際研討會論文

  1. Shu-Jui Chang, Yi-Jan Lin, Chih-Yu Teng and Ying-Tsang Tang, “The Ferroelectric Phase Homogeneity of HfZrO 2 Probed by X-ray Absorption” 8 th International Conference on Nano and Materials Science (ICNMS). Seattle USA, Jan. 17-20, 2020.
  2. Chen-Han Chou, Kai-Yu Peng, Kuan-Cheng Lu, Hao-Wei Tu, Shu-Jui Chang. ” Demonstration of High-quality WS2 Growth on SiN Substrate by a Low-temperature CVD Process”, 2020 8th International Conference on Nano and Materials Science, Seattle USA, Jan. 17-20, 2020.
  3. Yu Sheng Tsai , YewChung Sermon Wu and Hsiang Chen, “Fabrication and characterizations of ZnO/ZnS/CNT novel nanocomposites on SiO2 substrates,” The 3rd International Conference on Materials Engineering and Applications, Ho Chi Minh City, Vietnam, 2020, January 6-8
  4. Jing-Han Chang, Hung-Yang Lo, Yi-Tang Tseng, Chih-Yang Huang, Yi-Shin Ding, and Wen-Wei Wu, “Investigation of Indium Oxide Nanowire Transform to Indium Zinc Oxide (IZO) Via Solid State Reactions,” 2020 237th ECS Meeting, Montréal Canada, May. 10-14, 2020.
  5. Hsu, W. Y.*, Li, Y. J., Tseng, I. H., Lin, B. T. H., Chang, C. C., & Chen, C. (2020, June). Effect of annealing on the toughness of 40-μm-wide nanotwinned Cu lines. In 2020 IEEE 70th Electronic Components and Technology Conference (ECTC) (pp. 906-911). IEEE. May 26-29. 2020.
  6. Tseng, I. H.*, Shie, K. C., Lin, B. T. H., Chang, C. C., & Chen, C. (2020, June). Electromigration in 2 μm Redistribution Lines and Cu-Cu Bonds with Highly< 111>-oriented Nanotwinned Cu. In 2020 IEEE 70th Electronic Components and Technology Conference (ECTC) (pp. 479-484). IEEE. May 26-29. 2020.
  7. Demin Liu, Po-Chi Chen, Chien-Kang Hsiung, Shin-Yi Huang, Yan-Pin Huang, Steven Verhaverbeke, Glen Mori, and Kuan-Neng Chen, “Low Temperature Cu/SiO2 Hybrid Bonding with Metal Passivation,” 2020 Symposia on VLSI Technology and Circuits, Jun. 14-19, 2020. (國際合作)
  8. Fang-Chun Shen, Chih-Yang Huang, and Wen-Wei Wu, “Dynamic Observation of Electromigration in High Density Electroplated Nanotwinned Copper through in-Situ TEM,” 2020 237th ECS Meeting, Montréal Canada, May. 10-14, 2020.
  9. J. Su, P. J. Sung, K. H. Kao, Y. J. Lee, W. F. Wu, and W. K. Yeh, “Process and Structure Considerations for the Post FinFET Era,” IEEE Silicon Nanoelectronics Workshop (SNW), 13, Honolulu, June 13-14 (2020)
  10. Demin Liu, Po-Chih Chen, and Kuan-Neng Chen, “A Novel Low-Temperature Cu-Cu Direct Bonding with Cr Wetting Layer and Au Passivation Layer,” 2020 IEEE Electronic Components and Technology Conference (ECTC), Jun. 3 – 30, 2020.
  11. Ming-Yu Huang, Hung-Ming Chen, Kuan-Neng Chen, Shih-Hsien Wu, Yu-Min Lee, and An-Yu Su, “A Design Flow for Micro Bump and Stripe Planning on Modern Chip-Package Co-Design,” 2020 IEEE Electronic Components and Technology Conference (ECTC), Jun. 3 – 30, 2020.
  12. Pragyey Kumar Kaushik, Sankalp Kumar Singh, Ankur Gupta, Ananjan Basu, Edward Yi Chang, “Resistive Approach for Extraction of Bias-Dependent Parasitic Resistance, Mobility and Virtual Gate Length in GaN HEMT”, 2020 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, USA, June 13-14, 2020.
  13. S.-W. Tang, S. B. Kutub, and Tian-Li Wu, “Robust Forward Gate Bias TDDB Stability in Enhancement-mode Fully Recessed Gate GaN MIS-FETs with ALD Al2O3 Gate Dielectric,” 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), July 20-23, 2020.
  14. Y.-C. Chen, S.-W. Tang, P.-H. Lin, Z.-C. Chen, M.-H. Lu, K.-H. Kao, and Tian-Li Wu, “Silicon Nitride-induced VTH Shift in p-GaN HEMTs with Au-free Gate-first Process,” 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), July 20-23, 2020.
  15. Surya Elangovan, Chun-Han Huang, Ching-An Chen, Stone Chcng, Edward Yi Chang, “Bias Temperature Instability of GaN Cascode Power Switch”, 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore, July 20-23, 2020.
  16. Useinov*, H.-H. Lin, N. Useinov and L. Tagirov, “Simulation of the nanoscale interconnects within a spin-resolved electron transport model,” 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Aug. 2020, pp. 72-73. (國際合作)
  17. F.-C. Wu, W.-X. You, and P. Su, “Simulation and Design of Ultra-Thin-Body FeFET NVMs Considering Minor Loop Operation,” 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, August 2020.
  18. C.-C. Lin, Y.-J. Wu, W.-X. You, and P. Su, “Performance Evaluation of Logic Circuits with 2D Negative-Capacitance FETs considering the Impact of Spacers,” 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, August 2020.
  19. P.-T. Huang, T.-H. Tsai, P.-J. Yang, W. Hwang and H.-M. Chen, “Hierarchical Active Voltage Regulation for Heterogeneous TSV 3D-ICs,” IEEE International System-on-Chip Conference (SOCC), pp. 248-253, Sept.8-11, 2020.
  20. Y.-J. Wu, W.-X. You, and P. Su, “Nonvolatile SRAMs Enabled by Hysteretic Negative-Capacitance FETs – A Comparative Study of Novel 9T and 8T nvSRAMs,” Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials (SSDM), September 2020. Toyama, Japan.
  21. Yu-Wei Liu, Yi-Jui Chang, Chih-Chao Yang, Chang-Hong Shen, Kuan-Neng Chen, and Chenming Hu, “Effect of Dielectric Layer Scheme for High-Quality Silicon Channel in Monolithic 3DIC”, 2020 IEEE International Conference on Solid State Devices and Materials (SSDM), Sep. 27-30, 2020.
  22. Y.-S. Liu and P. Su, “Variability Analysis for Ferroelectric FET Nonvolatile Memories Considering Fluctuations due to Trapped Charges,” Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials (SSDM), September 2020. Toyama, Japan.
  23. Ping Huang, Quang Ho Luc, Hua Lun Ko, Jing Yuan Wu, Che Wei Hsu, Nhan Ai Tran, and Edward Yi Chang, “First Demonstration of Remote-Plasma Induced Surface Termination and Native Oxide Removal on In0.53Ga0.47As Using NH3/N2 Gas Mixture”, International Electron Devices & Materials Symposium (IEDMs 2020), Taoyuan City, Taiwan, Oct.15-16, 2020.
  24. Hua Lun Ko, Quang Ho Luc, Ping Huang, Jing Yuan Wu, Che Wei Hsu, Si-Meng Chen, Nhan Ai Tran, and Edward Yi Chang, “Nitrogen-Passivated InGaAs Gate-All-Around MOSFETs with Lowest Off-Current”, International Electron Devices & Materials Symposium (IEDMs 2020), Taoyuan City, Taiwan, Oct.15-16, 2020.
  25. Useinov, “Quantum heterostructures and spintronic devices” “Microelectronics Engineering Achievements Exhibition” International Electron Devices & Materials Symposium, IEDMS-2020, Oct.15-16. (2020).
  26. [IEDMS 2020 Best Paper Award] Yu-Wei Liu, Yi-Jui Chang, Chih-Chao Yang, Chang-Hong Shen, Kuan-Neng Chen, and Chenming Hu, “Investigation of Cooling Hole Structure in Location-Controlled-Grain Technique for Monolithic 3DIC”, International Electron Devices and Materials Symposium (IEDMS), Taoyuan, Taiwan, Oct. 15-16, 2020.
  27. Jui-Han Liu, Hsin-Chi Chang, Yi-Chieh Tsai, Chia-Hsuan Lee, Hiroyuki Ito, Young Suk Kim, Takayuki Ohba, and Kuan-Neng Chen, “Highly Accelerated Stress Test Reliability of WOW Bumpless Through Silicon Vias”, International Electron Devices and Materials Symposium (IEDMS), Taoyuan, Taiwan, Oct. 15-16, 2020. (國際合作)
  28. Hsin-Chi Chang, Ming-Wei Weng, Yi-Yu Pan, Demin Liu, Yuan-Chiu Huang, Han-Wen Hu, and Kuan-Neng Chen, “Using Annealing Process to Improve Electrical Properties in Low-Temperature Cu-to-Cu Bonding with Passivation Layer”, International Electron Devices and Materials Symposium (IEDMS), Taoyuan, Taiwan, Oct. 15-16, 2020.
  29. M. Nguyen, C. H. Wu, C. J. Su and T. L. Wu, “Evaluation of Scaling Zr-doped HfO2 Ferroelectric MOSCAPs,” Int’l Electron Devices and Materials Symp. (IEDMS), C4-2, Taoyuan, Taiwan, October 15-16 (2020)
  30. Lin, Tzu-Wen*, et al. “Study of Electromigration of Solder Microbumps by 3D X-ray Microscopy.” 2020 15th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT). IEEE, Oct.21-23, 2020.
  31. Ong, Jia Juen*, K. N. Tu, and Chih Chen. “Enhancement on the bonding strength of Cu-Cu joints by 2 steps annealing.” 2020 15th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT). IEEE, Oct.21-23, 2020.2020.
  32. Tseng, I-Hsin*, et al. “High Electromigration Resistance of Nanotwinned Cu Used in Redistribution Layers of Fan-out.” 2020 15th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT). IEEE, Oct.21-23, 2020.2020.
  33. Shie, Kai-Cheng*, et al. “Reliability of Instant Bonding of Cu-Cu joints: Thermal Cycling and Electromigration Tests.” 2020 15th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT). IEEE, Oct.21-23, 2020.2020.
  34. Chen, Fu-Chian*, et al. “High Strength Nanotwinned Copper foils for PCB and Current Collectors in Lithium Ion Battery.” 2020 15th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT). IEEE, Oct.21-23, 2020.2020.
  35. Kuo, Yu-Hao*, and Chih Chen. “Hybrid Cu-Cu Bonding with Non-Conductive Paste and Highly (111)-Oriented Nanotwinned Copper.” 2020 15th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT). IEEE, Oct.21-23, 2020.2020.
  36. Fang, Chuan-Yu*, and Chih Chen. “Research of mechanical properties of Copper foils with low temperature annealing.” 2020 15th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT). IEEE, Oct.21-23, 2020.2020.
  37. Che Wei Hsu, Quang Ho Luc, Hua Lun Ko, Ping Huang, Jing Yuan Wu, Nhan Ai Tran, Edward Yi Chang, “Ultra Low Power Consumption Tunnel Diode based on InAs/GaSb Core-Shell Nanowires,” The 2nd International Symposium on Engineering and Technology (ISET 2020), Nantou County, Taiwan, Nov.14-16, 2020.
  38. Ping Huang, Quang Ho Luc, Edward Yi Chang, “First Demonstration of Plasma-Assisted Roughness Improvement on Oxide Top Surface in InGaAs MOSFET”, The 2nd International Symposium on Engineering and Technology (ISET 2020), Nantou County, Taiwan, Nov.14-16, 2020.
  39. Hua Lun Ko, Quang Ho Luc, Si-Meng Chen, Che Wei Hsu, Edward Yi Chang, “Dramatically Performance Improvement of InGaAs Gate All Around MOSFETs Using Nitrogen Passivated”, The 2nd International Symposium on Engineering and Technology (ISET 2020), Taoyuan City, Taiwan, Nov.14-16, 2020.
  40. Chen-Han Chou, Ming-Huei Huang. ” Investigation of WS2 MOSFET with High-K HfO2 Gate Oxide and Dual-metal Contact”, 2020 2th International Symposium on Engineering and Technology, Nantou Taiwan, Nov. 14-16, 2020.
  41. Chia Hsing Wu, Yu Che Huang, Cheng Hung Shen, Kai Yu Peng, Yen Teng Ho, Chen Han Chou and Shu Jui Chang. ” The study of optical emission spectrum for WS2 growth on Silicon base substrate by ICPCVD”, 2020 2th International Symposium on Engineering and Technology, Nantou Taiwan, Nov. 14-16, 2020.
  42. Kai-Yu Peng, Yu-Hsuan Ho, Jie-Chun Luo, Chen-Han Chou, Chen-Hung Shen, Yen-Teng Ho, Shu-Jui Chang, “Highly Nb-Doped MoS2 Sensor with Full Range Humidity Sensing”, 2020 2th International Symposium on Engineering and Technology, Nantou Taiwan, Nov. 14-16, 2020.
  43. Ssu-Kuan Wu, Jui-Sheng Huang, Yu-Che Huang, Chia-Hsing Wu, Yen-Teng Ho, Shu-Jui Chang, Chu-Shou Yang, Wu-Ching Chou, “Study of epitaxial α-In2Se3 grown on Sapphire (0001) substrate by molecular beam epitaxy” 2020 2th International Symposium on Engineering and Technology, Nantou Taiwan, Nov. 14-16, 2020.
  44. Yu-Che Huang, Chia-Hsing Wu, Ssu-Kuan Wu, Yen-Teng Ho, Shu Jui Chang and Chu-Shou Yang, “Structural Control Two-dimensional Indium Selenide Epilayers Growth by Molecular Beam Epitaxy” 2020 2th International Symposium on Engineering and Technology, Nantou Taiwan, Nov. 14-16, 2020.
  45. Chanho Lee, Yi Chou, George Kim, Michael C. Gao, Ke An, Chuan Zhang, Wei Chen, Jonathan D. Poplawsky, Gian Song, Yi-Chia Chou, Peter K. Liaw, “Lattice-distortion-enhanced-yield Strength in a Refractory High-entropy Alloy” Materials Science & Technology, Nov. 2-6, 2020.
  46. Vitaly Gurylev, Meng-Yeh Lin, Artur Useinov and Yu-Jong Wu “ZnO Thin Film Fabricated by Atomic Layer Deposition: Interplay Between Piezorelectric Response and Film Properties” Users Meeting & WorkShops – NSRRC, Hsinchu, Taiwan, Nov. 10-12, 2020.
  47. E-Wen Huang, “Element Effects on High-Entropy Alloy Vacancy and Heterogeneous Lattice Distortion Subjected to Quasi-equilibrium Heating,” Neutron Scattering Symposium 2020, November 11- 13, 2020.
  48. W. Cheng, K. M. Chen, J. H. Wei, Y. C. Hsin, S. S. Sheu, and Y. C Tseng*, “Combined effects of stray field and Dzyaloshinskii–Moriya interaction on magnetic tunnel junction with stepped and pillar Structures,” Annual Conference on Magnetism and Magnetic Materials Conference (MMM), Virtual Conference, Nov. 2-6, 2020.
  49. E-Wen Huang, Chia-Yin Ma, Tu-Ngoc Lam, Wen-Ching Ko, Yi-Fan Chen, Chung-Kai Chang, Po-Han Hsiao, “Study the Mechanical and Electrical Properties of Electrospun P(VDF-TrFE) and P(VDF-TrFE-CTFE) Nanofibers,” 2020 MRS Fall Meeting & Exhibit, November 27- December 4, 2020.
  50. T.-M. Nguyen, C.-H. Wu, Chun-Jung Su and Tian-Li Wu, “Evaluation of Scaling Zr-doped HfO2 Ferroelectric MOSCAPs,” International Electron Devices & Materials Symposium, Dec.12-18, 2020.
  51. Yi-Chia Chou, Federico Panciera, Yuan-Wei Chang, Chia-Yi Wu, Wen-Chien Miao, Frances M Ross “Control of the Structure and Formation of Zero-Dimensional Nanostructures within Nanowires” MRS Virtual Spring/Fall Meeting, Nov.27-Dec.4 2020.
  52. H. Chen, H. Yeh, J. J. Lin, C. L. Lin, W. H. Chang, “Supercell structures of monolayer PtSe2 on Au Substrates” 28th International Colloquium on Scanning Probe Microscopy, Dec. 10-11, 2020.
  53. Kawakami, H. I. Huang, R. Arafune, N. Takagi, C. L. Lin, “Temperature-Dependent Electronic Structures of TMD Weyl Semimetals” 28th International Colloquium on Scanning Probe Microscopy, Dec. 10-11, 2020.
  54. Pratyay. Amrit, Yong-Cheng. Yang, Yi-He. Tsai, Ting-Yu. Chen, Huie-Ting. Liu, Shen-Yu. Wang, Shu-Jung. Tang, Chun-Liang. Lin, “Enhancing Thermal Stability of Ultrathin GeOx Films by Ti Doping” 28th International Colloquium on Scanning Probe Microscopy, Dec. 10-11, 2020.
  55. H. Chen, N. Kawakami, J. W. Xue, L. H. Kuo, C. N. Kuo, C. S. Lue, M. F. Luo, C. L. Lin “Visualization of Self-Recovery on PtTe2 Surfaces” 28th International Colloquium on Scanning Probe Microscopy, Dec. 10-11, 2020.
  56. J. Su*, M. K. Huang , K. S. Lee , V. P. H. Hu , Y. F. Huang , B. C. Zheng , C. H. Yao , N. C. Lin , K. H. Kao , T. C. Hong , P. J. Sung , C. T. Wu , T. Y. Yu , K. L. Lin , Y. C. Tseng , C. L. Lin , Y. J. Lee, T. S. Chao, J. Y. Li, , W. F. Wu , J. M. Shieh , Y. H. Wang and W. K. Yeh”, 3D Integration of Vertical-Stacking of MoS2 and Si CMOS Featuring Embedded 2T1R Configuration Demonstrated on Full Wafers”, IEEE International Electron Devices Meeting (IEDM), 239-242 Dec. 12-18, 2020 USA
  57. Yun-Yan Chung, Chao-Ching Cheng, Bo-Kai Kang, Wei-Chen Chueh, Shih-Yun Wang, Chen-Han Chou, Terry Hung, Shin-Yuan Wang, Wen-Hao Chang, Lain-Jong Li, Chao-Hsin Chien. ” Switchable NAND and NOR Logic Computing in Single Triple-Gate Monolayer MoS2 n-FET”, 2020 IEEE International Electron Devices Meeting (IEDM), Dec. 12-18, 2020 USA
  58. Po-Tsang Huang*, Yu-Wei Liu, Kuan-Fu Lai, Yun-Ping Lan, Tzung-Han Tsai, Bo-Jheng Shih, Ping-Yi Hsieh, Chih-Chao Yang, Chang-Hong Shen, Jia-Min Shieh, Da-Chiang Chang, Kuan-Neng Chen, Wen-Kuan Yeh, and Chenming Hu3, “Crystal-Orientation-Tolerant Voltage Regulator using Monolithic 3D BEOL FinFETs in Single-Crystal Islands for On-Chip Power Delivery Network,” 2020 International Electron Devices Meeting (IEDM), Dec. 12-18, 2020.
  59. T.-Z. Hong, W.-H. Chang, A. Agarwal, Y.-T. Huang, C.-Y. Yang, T.-Y. Chu, H.-Y. Chao, Y. Chuang, S.-T. Chung, J.-H. Lin, S.-M. Luo, C.-J. Tsai, M.-J. Li, X.-R. Yu, N.-C. Lin, T.-C. Cho, P.-J. Sung, C.-J. Su, G.-L. Luo, F.-K. Hsueh, K.-L. Lin, H. Ishii, T. Irisawa, T. Maeda, C.-T. Wu, W. C.-Y. Ma, D.-D. Lu, K.-H. Kao, Y.-J. Lee, H. J.-H. Chen, C.-L. Lin, R. W. Chuang, K.-P. Huang, S. Samukawa, Y.-M. Li, J.-H. Tarng, T.-S. Chao, M. Miura, G.-W. Huang, W.-F. Wu, J.-Y. Li*, J.-M. Shieh, Y.-H. Wang, W.-K. Yeh,” First Demonstration of heterogeneous Complementary FETs utilizing Low-Temperature (200 °C) Hetero-Layers Bonding Technique (LT-HBT),” 2020 International Electron Devices Meeting (IEDM), Dec. 12-18, 2020.