2023中心學術成果發表

期刊論文

  1. Mu-Ping Hsu, Chi-Yu Chen, Hsin-Chi Chang, Zhong-Jie Hong, Ming-Wei Weng, and Kuan-Neng Chen, “Development of Low-Temperature Bonding Platform Using Ultra-Thin Area Selective Deposition for Heterogeneous Integration”, Applied Surface Science, 635, 157645, Oct. 2023. (Impact Factor: 6.707) Q1
  2. [Invited Paper] Yuan-Chiu Huang, Yu-Xian Lin, Chien-Kang Hsiung, Tzu-Heng Hung, and Kuan-Neng Chen, “Cu-Based Thermocompression Bonding and Cu/Dielectric Hybrid Bonding for Three-Dimensional Integrated Circuits (3D ICs) Application,” Nanomaterials, 13(17), 2490, Sep. 2023. (Impact Factor: 5.3) Q1
  3. Tzu-Heng Hung, Ping-Jung Liu, Chiao-Yen Wang, Tsai-Fu Chung, and Kuan-Neng Chen, “A Low-Cost Passivation for Low Temperature Cu-Cu Bonding Using PVD-deposited Cu3N”, IEEE Journal of the Electron Devices Society, 11, pp. 473-479, Sep. 2023. (Impact Factor: 2.523) Q2
  4. Tzu-Heng Hung, James Yi-Jen Lo, Tzu-Ying Kuo, Shing-Yih Shih, Sheng-Fu Huang, Yen-Ling Lin, Hsih-Yang Chiu, Wei-Zhong Li, Han-Wen Hu, Hsiang-Hung Chang, Chiang-Lin Shih, Jeff J.P. Lin, and Kuan-Neng Chen, “TSV Integration with Chip Level TSV-to-Pad Cu/SiO2 Hybrid Bonding for DRAM Multiple Layer Stacking”, IEEE Electron Devices Letters, 44(7), pp. 1176-1179, Jul. 2023. (Impact Factor: 4.9) Q1
  5. Hao-Tung Chung, Yu-Ming Pan, Nein-Chih Lin, Bo-Jheng Shih, Chih-Chao Yang, Chang-Hong Shen, Po-Tsang Huang, Huang-Chung Cheng, Kuan-Neng Chen, and Chenming Hu, “Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs”, IEEE Electron Devices Letters, 44(7), pp. 1036-1039, Jul. 2023. (Impact Factor: 2.97) Q1
  6. Hao-Tung Chung, Yu-Ming Pan, Nein-Chih Lin, Bo-Jheng Shih, Chih-Chao Yang, Chang-Hong Shen, Huang-Chung Cheng, and Kuan-Neng Chen, “High-Performance P-Type Germanium Tri-Gate FETs via Green Nanosecond Laser Crystallization and Counter Doping for Monolithic 3-D ICs”, IEEE Journal of the Electron Devices Society, 11, pp. 262-268, Apr. 2023. (Impact Factor: 2.523) Q2
  7. Zhong-Jie Hong, Ming-Wei Weng, Chih-Han Chen, Mu-Ping Hsu, Han-Wen Hu, Tai-Yu Lin, Ying-Chan Hung, and Kuan-Neng Chen, “Scheme for Multi-Chiplet Integration with Low Thermal Budget by Asymmetric Cu-Cu Bonding with Au Passivation Bonding Structure”, IEEE Electron Devices Letters, 44(3), pp. 492-495, Mar. 2023. (Impact Factor: 4.9) Q1
  8. C.-Y. Teng, C.-C. Cheng, K.-S. Li, Chenming Hu, J.-M. Lin, B.-H. Lin, M.-T. Tang, and Y.-C. Tseng, ” Optimizing the Ferroelectric Properties of Hf1−xZrxO2 Films via Crystal Orientation “, ACS Applied Electronic Materials 2023 5 (2), 1114-1122, Feb. 2023. (Impact Factor: 4.7) Q2
  9. Yang, S. C., Tran, D. P., and Chen, C. (2023). Recrystallization and Grain Growth in Cu-Cu Joints under Electromigration at Low Temperatures. Materials 2023, 16(17), 5822. (August 2023) (IF: 3.748) Q2
  10. Wang, H. -T. Hsu, A. Desai and Y. -F. Tsao, “Design of a Compact RF Front-End Transceiver Module for 5G New-Radio Applications,” IEEE Transactions on Instrumentation and Measurement, vol. 72, pp. 1-9, Jan. 2023, Art no. 2000409. (Impact Factor: 5.332) Q1
  11. Desai, H. -T. Hsu, B. M. Yousef, A. M. Ameen, Y. -F. Tsao and A. A. Ibrahim, “UWB Connected Ground Transparent 4-Port Flexible MIMO Antenna for IoT Applications,” IEEE Internet of Things Journal, Nov. 2023, doi: 10.1109/JIOT.2023.3333814. (Impact factor: 10.6, Rank factor: 4/158, Q1) (國際合作)
  12. T.-Y. Chang, K.-C. Wang, H.-Y. Liu, J.-H. Hseun, W.-C. Peng, N. Ronchi, U. Celano, K. Banerjee, J. V. Houdt, and T.-L. Wu, “Comprehensive Investigations of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-doped and Si-doped HfO2 Metal-Ferroelectric-Metal Memory,” Nanomaterials, July, 2023. (IF=5.3) Q1
  13. S. K. Singh, B.-R. Chen, Z.-H. Huang, T.-L. Wu, and Y. S. Chauhan, “Trapping/Detrapping Kinetic Modeling under Positive/Negative Gate Stress including Inhibition Dynamics in 4H-SiC MOS Capacitors,” IEEE Transactions on Electron Devices, Nov. 2023. (Impact Factor:3.1) Q2 (國際合作)
  14. Qi-Tian Zhang, Yi-Tang Tseng, Kuo-Chang Lu, Chun-Wei Huang*, Hsun-FengHsu, Wen-Wei Wu*.”Epitaxial growth and E-beam induced structural changes of single crystalline 2D antimonene’’ Scripta Materialia 2023, 226, 115262, Mar. 2023. (Impact Factor: 6.302) Q1
  15. Meng-Yu Tsai, Chia-Tse Huang, Che-Yi Lin, Mu-Pai Lee, Feng-Shou Yang, Mengjiao Li, Yuan-Ming Chang, Kenji Watanabe, Takashi Taniguchi, Ching-Hwa Ho, Wen-Wei Wu*, Mahito Yamamoto, Jiunn-Lin Wu*, Po-Wen Chiu* and Yen-Fu Lin*,” A reconfigurable transistor and memory based on a two-dimensional heterostructure and photoinduced trapping’’ Nature Electronics, 6, 755–764 Sep. 2023 (Impact Factor:34.3) Q1 (國際合作)
  16. Chun-Yen Lai, Chia-Fei Liu, Tzu-Ling Lin, Mei-Yu Chen, Yu-Cheng Huang, Her-Hsiung Huang, Chung-Li Dong, Ding-Yeong Wang, Ping-Hung Yeh*, and Wen-Wei Wu*,”Defect-Rich SnO2 Nanofiber as an Oxygen-Defect-Driven Photoenergy Shield against UV Light Cell Damage’’ ACS Applied Materials & Interfaces 15, 36, 42868–42880, August. 2023 (Impact Factor: 10.383) Q1
  17. R.Tseng, S.-T. Wang, T.Ahmed, Y.-Y. Pan, S.-C. Chen, C.-C. Shih, W.-W. Tsai, H.-C. Chen, C.-C. Kei, T.-T. Chou, W.-C. Hung, J.-C. Chen, Y.-H. Kuo, C.-L. Lin, W.-Y. Woon, S. S. Liao, D.-H. Lien*, “Wide-range and area-selective threshold voltage tunability in ultrathin indium oxide transistors”, Nature Communications, 14 , 5243, Aug. 2023. (Impact Factor: 17.7) Q1
  18. T. Ahmed, J. Zha, K. KH Lin, H.-C. Kuo, C. Tan, D.-H. Lien*, “Bright and Efficient Light-Emitting Devices Based on Two-Dimensional Transition Metal Dichalcogenides”, Advanced Materials, 35, 2208054, Feb. 2023. (Impact Factor: 32.1) Q1 (國際合作)
  19. S.-T. Wang, Y.-L. Lin, L.-R. Lee, Y.-C. Chang, T.-T. Weng, Y.-Y. He, Y.-Y. Pan, T.-T. Chou, J.-T. Chen, and D.-H. Lien*. “Reversible Charge Transfer Doping in Atomically-Thin In2O3 by Viologens”, ACS Applied Materials & Interfaces, https://doi.org/10.1021/acsami.3c15809 (Impact Factor: 10.383) Q1
  20. K. KH. Lin, L.-C. Teng, T-T. Weng, T.-J Lin, J.-C. Lin, S.-Y. Wang, P.-H Ho, W.-Y. Woon, C.-C. Kei, T.-T. Cho, C.-H. Chien* and D.-H. Lien*, “Suppressing Threshold Voltage Drift in Sub-2 nm In2O3 Transistors with Improved Thermal Stability”, IEEE Electron Device Letters, Dec. 2023. DOI:10.1109/LED.2023.3334530 (Impact Factor: 4.816) Q1
  21. Y.-Y. Huang, P.-T. Huang, P.-Y. Lee, and P. Su, “A New Approach for Reconfigurable Multi-Function Logic-in-Memory using Complementary Ferroelectric-FET (CFeFET),” in IEEE Transactions on Electron Devices, vol. 70, no. 8, pp. 4497-4500, Aug. 2023. (Impact Factor:3.1) Q2
  22. Yun-Wen Chen and C. W. Liu, “Effects of shear strain on HZO ferroelectric orthorhombic phases,” Appl. Phys. Lett., Vol. 123, no. 11, pp. 112901, Sep. 2023. (Impact Factor: 4.0) Q2
  23. Zefu Zhao, Yu-Rui Chen, Yun-Wen Chen, Jer-Fu Wang, Yifan Xing, Wang Ji, Guan-Hua Chen, Jia-Yang Lee, Rachit Dobhal, and C. W. Liu, “Engineering Hf0.5Zr0.5O2 Ferroelectric Tunnel Junctions with Amorphous WOx Bottom Electrodes Achieving High Remanent Polarization and Record Low Operating Voltage,” IEEE Transactions on Electron Devices, vol. 70, no. 10, pp.5022-5027, Oct, 2023. (Impact Factor: 3.1) Q2
  24. Wei-Jen Chen, Yi-Chun Liu, Yun-Wen Chen, Yu-Rui Chen, Hsin-Cheng Lin, Chien-Te Tu, Bo-Wei Huang, and C. W. Liu, “Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated into 8 Stacked Ge0.95Si0.05 Nanowires and Nanosheets nFETs to Boost ION,” IEEE Transactions on Electron Devices, vol. 70, no. 12, pp. 6673-6679, 2023. (Impact Factor: 3.1) Q2
  25. T. Chou, L. -K. Wang, T. -Y. Chung, C. -W. Yao, H. -C. Lin and C. W. Liu, “3D SRAM Using Ultrathin Body Nanosheets and Bitline Signal Decoupling,” in IEEE Electron Device Letters, vol. 44, no. 12, pp. 1975-1978, Dec. 2023. (Impact Factor: 4.9) Q2
  26. Jing-Yuan Wu, Ping Huang, Quang-Ho Luc, Yung-Chun Chiang, Hsiang-Chan Yu, Mu-Yu Chen, Edward-Yi Chang “Inversion-mode InGaAs FinFETs for RF applications”, Appl. Phys. Express 16 091004 August 2023(Impact Factor: 2.3) Q2
  27. Shivendra K. Rathaur, Jui-Sheng Wu, Tsung-Ying Yang, Asifa Amin, Abhisek Dixit, Edward-Yi Chang, “High-Temperature TDDB Investigation on High Performance-Centered Hybrid HZO/HfON/Al2O3, Ferro-Electric Charge-Trap (FEG) GaN-HEMT”, in IEEE Transactions on Electron Devices, vol. 70, no. 9, pp. 4584-4590, Sept. 2023 (Impact Factor: 3.1) Q2
  28. Wan-Hsin Chen, Naoya Kawakami, Jing-Wen Hsueh Chenming Hu, Jyh-Pin Chou, Meng-Fan Luo, Horng-Tay Jeng, Shu-Jung Tang and Chun-Liang Lin, Toward Perfect Surfaces of Transition Metal Dichalcogenides with Ion Bombardment and Annealing Treatment, ACS Appl. Mater. Interfaces 15, 12, 16153–16161, February. 2023. (Impact Factor: 10.383) Q1 (國際合作)
  29. Fu-Xiang Rikudo Chen, Chia-Yu Lin, Hui-Ying Siao, Cheng-Yuan Jian, Yong-Cheng Yang and Chun-Liang Lin, Deep learning based atomic defect detection framework for two-dimensional materials, Sci Data 10, 91 February. 2023. (Impact Factor: 8.501) Q1 (國際合作)
  30. Tilo H. Yang*, Bor-Wei Liang, Hsiang-Chi Hu, Fu-Xiang Chen, Sheng-Zhu Ho, Wen-Hao Chang, Liu Yang, Han-Chieh Lo, Tzu-Hao Kuo, Jyun-Hong Chen, Po-Yen Lin, Kristan Bryan Simbulan, Zhao-Feng Luo, Alice Chinghsuan Chang, Yi-Hao Kuo, Yu-Seng Ku, Yi-Cheng Chen, You-Jia Huang, Yu-Chen Chang, Yu-Fan Chiang, Ting-Hua Lu, Min-Hung Lee, Kai-Shin Li, Menghao Wu, Yi-Chun Chen, Chun-Liang Lin* & Yann-Wen Lan*, “Ferroelectric transistors based on shear-transformation-mediated rhombohedral-stacked molybdenum disulfide” Nat. Electron. Nov. 2023 (Impact Factor: 33.255) Q1 (國際合作)
  31. Chung, C. H., Chen, H. R., Ho, M. J., & Lin, C. Y. (2023). WS2 Transistors with Sulfur Atoms Being Replaced at the Interface: First-Principles Quantum-Transport Study. ACS omega, 8(11), 10419-10425.March 2023 (Impact Factor:4.1) Q2
  32. M. U. Javed, J.-W. Yang, S. Kumari, M. Mustaqeem, T.-Y. Peng, L. C. Yang, Y.-J. Lu,* Chao-Cheng Kaun,* “Tailoring the Plasmonic Properties of Complex Transition Metal Nitrides: A Theoretical and Experimental Approach”, Applied Surface Science, 641, 158486, December 2023 (Impact Factor: 6.7) Q1.
  33. Lai, J. Y., Tran, D. P., Yang, S. C., Tseng, I. H., Shie, K. C., Leu, J., & Chen, C. (2023). Stress Relaxation and Grain Growth Behaviors of (111)-Preferred Nanotwinned Copper during Annealing. Nanomaterials, 13(4), 709. (Feb 2023) (IF: 5.719) Q1

 

國際研討會論文

  1. Y.C. Hsieh, Santosh P. Chiniwar, C.H. Shih, C.Y. Teng, and Y.C. Tseng*, “Polarization Enhancement of the Hf1-xZrxO2 Films with an Ultra-thin WOx Insertion Layer”, The 40th Meeting on Ferroelectric Materials and Theirs Applications (FMA40), Kyoto, Japan, May 24-27, 2023.
  2. Yan-Kui Liang, Jun-Yang Zheng, Yu-Lon Lin, Yu Chen, Kuan-Lun Chen, Dong-Ru Hsieh, Li-Chi Peng, Ching-Hua Chiu, Yu-Cheng Lu , Tsung-Te Chou, Chi-Chung Kei, Chun-Chieh Lu, Huai-Ying Huang, Yu-Ming Lin, Yuan-Chieh Tseng, Tien-Sheng Chao, Edward Yi Chang , and Chun-Hsiung Lin *,“First Demonstration of Highly Scaled Atomic Layer Deposited Ultrathin InSnZnO Channel Thin Film Transistor Exhibiting Superior Electrical Characteristics,” International Electron Devices Meeting (IEDM) (Dec.9-13 2023) San Fransisco, USA
  3. Yang, S. C., C. Chen “High Temperature Storage of Cu-Cu Joints Fabricated by Highly (111)-oriented Nanotwinned Cu”. 2023 IEEE 73rd Electronic Components and Technology Conference, ECTC, Orlando, Florida, May 30 – June 2, 2023
  4. Ong, J. J., C. Chen “Surface Modification on Hydrophilicity Enhancement Using NH4OH, NaOH and KOH on Fine-Pitch Low Temperature Cu/SiO2 Hybrid bonding”. 2023 IEEE 73rd Electronic Components and Technology Conference, ECTC, Orlando, Florida, May 30 – June 2, 2023
  5. J.-H. Hsuen, M. Lederer, L. Kerkhofs, Y. Raffel, L. Pirro, T. Chohan, T. Kämpfe, S. De,  and T.-L. Wu, “Demonstration of Large Polarization in Si-doped HfO2 Metal–Ferroelectric–Insulator–Semiconductor Capacitors with Good Endurance and Retention, “International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), April 2023.
  6. Hsin-Ya Sung, Yu-Lun Chueh, and Wen-Wei Wu* “Atomic-Scale Observation of Few-Layers MoSSe Devices for Biasing via in situ Transmission Electron Microscope,” 2023 MRS Spring Meeting & Exhibit, San Francisco, CA, USA. April 10-14, 2023.
  7. Y.-F. Tsao, Y. Wang, P. -H. Chiu, A. Desai, M. Wolf, S. Chevtchenko, J. Würfl and H.-T. Hsu, “Demonstration of a Millimeter-wave High-Power Transceiver Module using AlN Interposer,” 2023 Asia-Pacific Microwave Conference (APMC). Dec. 5-8, Taiwan
  8. Y.-H. Chen, I-T. Wang, Y.-M. Zheng, and T.-H. Hou, “Guideline of device optimization for ferroelectric InGaZnO transistor,” Electron Devices Technology and Manufacturing Conference (EDTM) 2023, Seoul, Korea, Mar. 7-10, 2023.
  9. [Invited] Kuan-Neng Chen, “From Backend 3D to Frontend 3D: New Platforms for 3DIC and Advanced Packaging,” Heterogeneous Integration Global Summit, SEMICON Taiwan, Taipei, Taiwan, Sep. 5-8, 2023.
  10. Bo-Jheng Shih, Yu-Ming Pan, Hao-Tung Chung, Nei-Chih Lin, Chih-Chao Yang, Po-Tsang Huang, Huang-Chung Cheng, Chang-Hong Shen, Jia-Min Shieh, Wen-Fa Wu, Kuan-Neng Chen, and Chenming Hu, “Middle-End of Line Si FinFETs Using Laser-Liquid-Phase-Epitaxy Technique for Monolithic 3DIC”, 2023 IEEE International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, Sep 5-8, 2023.
  11. Mu-Ping Hsu, Hsin-Chi Chang, Yi-Chieh Tsai, and Kuan-Neng Chen, “Development of Low-thermal-budget and Low-electrical-loss Heterogeneous Integration Platform by Glass Substrate and Area-Selective Passivation Technology”, 2023 IEEE International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, Sep 5-8, 2023.
  12. [Invited] Kuan-Neng Chen, “Hybrid Bonding: The Key Technology to Reach Fine Pitch and High Density Stacking in Heterogeneous Integration,” 2023 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 17-20, 2023.
  13. [Invited] Kuan-Neng Chen, “3DIC Introduction and What Can ALD Do in 3DIC,” 7th Area Selective Deposition (ASD) Workshop, Incheon, Korea, Apr. 2-5, 2023.
  14. Chien-Te Tu, Wan-Hsuan Hsieh, Yu-Rui Chen, Bo-Wei Huang, Yu-Tsung Liao, Wei-Jen Chen, Yi-Chun Liu, Chun-Yi Cheng, Hung-Chun Chou, Hao-Yi Lu, Cheng-Hsien Hsin, Geng-Min He, Dong Soo Woo, Shee-Jier Chueh, and C. W. Liu, “First Demonstration of Monolithic Self-aligned Heterogeneous Nanosheet Channel Complementary FETs with Matched VT by Band Alignments of Individual Channels,” International Electron Devices Meeting (IEDM), 9-13 Dec. 2023. San Fransico, USA
  15. Yi-Chun Liu, Yu-Rui Chen, Yun-Wen Chen, Wei-Jen Chen, Chien-Te Tu, and C. W. Liu, “High-κ (47) Hf0.2Zr0.8O2 Gate Stacks Integrated into 8 Stacked Ge0.95Si0.05 Nanowire and Nanosheet nFETs to Significantly Enhance ION,” 54th IEEE Semiconductor Interface Specialists Conference (SISC). San Diego, CA, December 13 – 16, 2023
  16. Jih-Chao Chiu, Eknath Sarkar, Yuan-Ming Liu, Yu-Ciao Chen, Yu-Cheng Fan, Rong-Wei Ma, and C. W. Liu, “Demonstration of a-InGaZnO Gate-all-around Nanosheet FETs,” 54th IEEE Semiconductor Interface Specialists Conference (SISC). San Diego, CA, December 13 – 16, 2023
  17. Yuan-Ming Liu, Eknath Sarkar, Yu-Rui Chen, Jih-Chao Chiu, Zefu Zhao, Yu-Ciao Chen, Yu-Cheng Fan, Rong-Wei Ma, and C. W. Liu, “Large Memory Window of 2.7 V and High Endurance > 1011 Cycles in Self-Aligned Top-Gated a-InGaZnO Ferroelectric FET by Incorporating ZnO-Rich,” 54th IEEE Semiconductor Interface Specialists Conference (SISC). San Diego, CA, December 13 – 16, 2023
  18. (invited) Yi-Chun Liu, Chien-Te Tu, Wan-Hsuan Hsieh, Yu-Rui Chen, Bo-Wei Huang, Chun-Yi Cheng, and C. W. Liu, “Stacking High Mobility Channels,” 244th ECS Meeting, Gothenburg, Sweden, October 8-12, 2023.
  19. (invited) Chien-Te Tu, Wan-Hsuan Hsieh, Yi-Chun Liu, Yu-Rui Chen, Bo-Wei Huang, Chun-Yi Cheng, and C. W. Liu, “Channel and Transistor Stacking of Nanosheets,” International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, September 5-8, 2023.
  20. Yu-Rui Chen, Yi-Chun Liu, Zefu Zhao, Wan-Hsuan Hsieh, Jia-Yang Lee, Chien-Te Tu, Bo-Wei Huang, Jer-Fu Wang, Shee-Jier Chueh, Yifan Xing, Guan-Hua Chen, Hung-Chun Chou, Dong Soo Woo, M. H. Lee, and C. W. Liu, “First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles,” Symposium on VLSI Technology and Circuits (VLSI), JUNE 11-16, 2023.
  21. Zefu Zhao, Yu-Rui Chen, Yun-Wen Chen, Wan-Hsuan Hsieh, Jer-Fu Wang, Jia-Yang Lee, Yifan Xing, Guan-Hua Chen, and C. W. Liu, “Towards Epitaxial Ferroelectric HZO on n+-Si/Ge Substrates Achieving Record 2Pr = 84 μC/cm2 and Endurance > 1E11,” Symposium on VLSI Technology and Circuits (VLSI), JUNE 11-16, 2023.
  22. Yi-Chun Liu, Yu-Rui Chen, Yun-Wen Chen, Hsin-Cheng Lin, Wan-Hsuan Hsieh, Chien-Te Tu, Bo-Wei Huang, Wei-Jen Chen, Chun-Yi Cheng, Shee-Jier Chueh, and C. W. Liu, “Extremely High- Hf0.2Zr0.8O2 Gate Stacks Integrated into Ge0.95Si0.05 Nanowire and Nanosheet nFETs Featuring Respective Record ION per Footprint of 9200μA/μm and Record ION per Stack of 360μA at VOV=VDS=0.5V,” Symposium on VLSI Technology and Circuits (VLSI), JUNE 11-16, 2023.
  23. Jih-Chao Chiu, Eknath Sarkar, Yuan-Ming Liu, Yu-Ciao Chen, Yu-Cheng Fan, and C. W. Liu, “First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable SS=61 mV/dec, Ioff<10-7 A/ m, DIBL= 44 mV/V, Positive VT, and Process Temp. of 300 °C,” Symposium on VLSI Technology and Circuits (VLSI), JUNE 11-16, 2023.
  24. (Best Student Paper Award) Yu-Rui Chen, Chien-Te Tu, Zefu Zhao, Yi-Chun Liu, Bo-Wei Huang, Yifan Xing, Guan-Hua Chen, and C. W. Liu, “Stacked Two Ge0.98Si0.02 Nanowire nFETs with High-κ Dielectrics Featuring High ION per Footprint of 4800 μA/μm at VOV=VDS=0.5V,” 2023 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2023. Hsinchu, Taiwan, Apr. 17-20, 2023.
  25. Jian, W. B.; Awasthi, C.; Lu, K. C.; Islam, S., Thermoelectric properties of two-dimensional MoS2 semiconductors in a wide temperature range. Bulletin of the American Physical Society 2023. March Meeting 2023, Las Vegas, Nevada (March 5-10)
  26. Jyun-Yu Wu, Yung-Ting Lee, Guan-Hao Chen, Jie-Yu Hsu, Zheng-Hong Li, Chang-Tsan Lee, Chia-Nung Kuo, Juhn-Jong Lin, Wen-Hao Chang, Chin-Shan Lue, Po-Tuan Cheng, Cheng-Tien Chiang, Chien-Cheng Kuo, Chien-Te Wu, Chi-Cheng Lee, Ming-Chiang Chung, Hung-Chung Hsueh, Chun-Liang Lin, “Tomography Scan of Charge Density Wave in NbSe2” THE 21st TAIWAN-JAPAN-KOREA SYMPOSIUM ON STRONGLY CORRELATED ELECTRON SYSTEMS (TJK21), Hsinchu, Taiwan, April. 6-7 2023.
  27. Wan-Hsin Chen, Chin-Hsuan Chen, Guan-Hao Chen, Pratyay Amrit, Fu-Xiang Rikudo Chen, Pei-Jung Chen, Chun-Kai Ku, Jia-Ying Li, Wei-Chuan Chen, Iwao Matsuda, Chien-Te Wu, Chung-Yu Mou, Horng-Tay Jeng, Shu-Jung Tang, Chun-Liang Lin, “Superconductivity in Plumbene-based Superstructure” ICQNS 2023, Seoul, Korea,Oct. 9-13, 2023.
  28. X.-R. Yu, C.-C. Hsieh, M.-H. Chuang, M.-Y. Chiu, T.-C. Sun, W.-Z. Geng, W.-H. Chang, Y.-J. Shih, W.-H. Lu, W.-C. Chang, Y.-C. Lin, Y.-C. Pai, C.-Y. Lai, M.-H. Chuang, Y. Dei, C.-Y. Yang, H.-Y. Lu, N.-C. Lin, C.-T. Wu, K.-H. Kao, W. C.-Y. Ma, D. D. Lu, Y.-J. Lee, G.-L. Luo, M.-H. Chiang, T. Maeda, W.-F. Wu, Y.-M. Li, T.-H. Hou, Y.-H. Wang,” First Demonstration of Defect Elimination for Cryogenic Ge FinFET CMOS Inverter Showing Steep Subthreshold Slope by Using Ge-on-Insulator Structure,” International Electron Devices Meeting (IEDM), 9-13 Dec. 2023. San Fransico, USA
  29. Guan-Hao Chen, Meng-Kai Lin, Ciao-Lin Ho, Wei-Chen Chueh, Joseph A. Hlevyack, Chia-Nung Kuo, Tsu-Yi Fu, Juhn-Jong Lin, Chin-Shan Lue, Wen-Hao Chang, Noriaki Takagi, Ryuichi Arafune, Tai-Chang Chiang, Chun-Liang Lin, “Bandgap Tuning for Monolayer TMD Materials by Using STM Tip” APS March Meeting, Las Vegas, USA, March 5-10 2023.
  30. Guan-Hao Chen, Li-Syuan Lu, Po-Sen Mao, Pei-Yu Chuang, Cheng-Rong Hsing, YuShiuan Su, Juhn-Jong Lin, ChengMaw Cheng, Ching-Ming Wei, Chun-Liang Lin, Wen-Hao Chang. “Ultralow-defect-density molybdenum diselenide grown on Au(111) by using oxygen-free precursor” ICQNS 2023, Seoul, Korea,Oct. 9-13, 2023.
  31. Ping Huang, Mu-Yu Chen, Edward Yi Chang “Enhanced Device Characteristics of InGaAs MOSFETs Using High Switching Speed Ferroelectric Material”, 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)
  32. R.Tseng and D.-H. Lien*, “Precise control of threshold voltage in ultra-thin quasi-2D oxide semiconductor based transistors. In: Low-Dimensional Materials and Devices” SPIE, 2023. p. 24-25. 16 – 19 October 2023 Rochester, New York, United States
  33. C.-W. Huang and P. Su, “Design Space Exploration of Dual-Port FeFET for Low-Voltage Applications,” Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, September 2023.
  34. H.-L. Lin and P. Su, “Variability Analysis of Stacked-Nanosheet FeFET for MLC Memory and Synapse Applications,” 2023 Silicon Nanoelectronics Workshop (SNW), Kyoto, Japan, June 2023.
  35. Y.-C. Chen, K.-Y. Hsiang, M.-H. Lee and P. Su, “NLS based Modeling of Temperature-dependent Phase Transition Characteristics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides,” 2023 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, April 2023.
  36. L.-E. Chang and P. Su, “Simulation and Investigation of Gate-Stack Variations in Ferroelectric-FET (FeFET) with Double-Gate Structure,” 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, April 2023.
  37. H.-L. Lin and P. Su, “Analysis and Design of Stacked-Nanosheet FeFET Synapse Conductance Response under Identical Pulse Scheme for Neuromorphic Applications,” 2023 Electron Devices Technology and Manufacturing Conference (EDTM), Seoul, Korea, March 2023.
  38. Yi-Chuan Chen, Y.-C. Chen, K.-Y. Hsiang, M.-H. Lee and P. Su, “Performance Evaluation of AFeRAM under Low Temperature Operation,” 2023 Electron Devices Technology and Manufacturing Conference (EDTM), Seoul, Korea, March 2023.
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