2020年智慧半導體奈米系統技術研究中心研究成果發表會

本中心將於2020年11月25日~26日舉辦本年度線上成果發表會,會中將安排17位同學教授及研究人員作線上Oral成果發表(時間如議程),18位同學以 MP4 成果發表,敬請期待!

2020年智慧半導體奈米系統技術研究中心線上研究成果發表會議程.pdf

會議手冊

參加會議需知

線上會議(Oral presentation) 日期: 11 月 25~26 日
Zoom 會議 ID: 315 567 3615 會議密碼:545616
(請於會議開始 3 分鐘前登入)

加入 Zoom 會議
https://zoom.us/j/3155673615?pwd=UlU1YUpUcmQvR0JhWnlreW9pSGZXZz09

下方為MP4 成果發表可以透過連結前往觀看

Oral成果發表-Abstract

11/25. 2020

No.Nov. 25Title
010:30~10:40Opening ( Professor Chenming Hu)
110:40~11:20Crystal-Orientation-Tolerant Voltage Regulator using Monolithic 3D BEOL FinFETs in Single-Crystal Islands for On-Chip Power Delivery Network (黃柏蒼教授)
211:20~12:00STM Characterizations of 2D Materials and Devices (林俊良教授)
312:00~12:30Understanding the ferroelectric Hf0.5Zr0.5O2 formation based on kinetic model (張書睿 助理研究員)
413:30~14:00Phase Diagram of HZO on TiN Substrates - First-Principles Study (陳韻文博士)
514:00~14:30 Two Strategies for Decreasing Contact Resistance Between TMD and Metal Leads: A First Principles Study (林耿民博士)
614:30~15:00Interface Engineering of ALD AlN on WS2 FETs (王信淵)
715:00~15:30First-principles Quantum-transport Calculations of TMD/Metal Contact (楊琮甫)
815:30~16:00
Optimizing the Thermal Stability of Ultrathin GeOx
Films by Ti Doping (Pratyay Amrit)
16:00~17:00Live Q/A with additional MP4 papers authors (#1~#9)

11/26. 2020

No.Nov.26Title
910:30~11:00Steep subthreshold-swing InGaAs FETs Using Ferroelectric Materials (柯驊倫)
1011:00~11:30Exploring the High Mobility Performance via Gate-Dielectric Engineering of MoS2 Channel (塗浩瑋)
1111:30~12:00Enhancement on the bonding strength of Cu-Cu joints by 2-step annealing.(王家俊)
1212:00~12:30Impacts of Nitridation on Ferroelectric HfZrO2 Crystal Structures (林逸然)
1313:30~14:00Metal Electrode-induced Phase Uniformity on Hf0.5Zr0.5O2 Thin Film (鄧智宇)
1414:00~14:30Phase Transformation of the Hf0.5Zr0.5O2 Affected by Pulse Electric Field During Thermal Annealing (鄭佳杰)
1514:30~15:00Single-Crystal-Islands Technique of Si for Monolithic 3D BEOL FinFET Circuits (鍾昊東)
1615:00~15:30Visualizing Self-Recovery of PtTe2 Surfaces (陳琬忻)
1715:30~16:00S-curve Engineering for ON-state Performance using Anti-ferroelectric/Ferroelectric Stack Negative-Capacitance FinFET(黃士恩)
16:00~17:00Live Q/A with additional MP4 papers authors (#10~#18)

MP4 成果發表-Abstract (影片為右方連結)

No.學生指導教授發表題目(Title)MP4
1劉佑陞蘇彬Variability Analysis for Ferroelectric FET Nonvolatile Memories Considering Random Ferroelectric-Dielectric Phase Distribution
2黃士恩蘇彬Investigation of Inversion Charge Characteristics and Inversion Charge Loss for InGaAs Negative-Capacitance Double-Gate FinFETs Considering Quantum Capacitance
3柯驊倫張翼Using Nitrogen passivation treatment to improve leakage current of InGaAs Gate-All-Around MOSFETs
4黃平張翼Suppressed Acceptor-Type Interface Traps and Enhanced Performance of InGaAs MOSFET Using NH3 / N2 Remote Plasma
5許哲瑋張翼Effect of different ohmic electrodes on InAs/GaSb tunnel diode electrical properties
6魏嘉俊簡紋濱Enhanced electrochromic device based on MoO3 doping, fabricated by EEW
7曾億信陳智High Electromigration lifetime of Nanotwinned Cu Used in Redistribution Layers of Fan-out
8謝凱程陳智Electromigration and temperature cycling tests of Cu-Cu joints fabricated by instant copper direct bonding
9郭佑豪陳智Cu-Cu Bonding with Non-Conductive Paste and Highly (111)-Oriented Nanotwinned Copper
10鍾志宏林炯源Computational Study of Process Stability of Non-vdW WS2 /Metal Contact
11陳竑任林炯源First-principles Quantum-transport Calculations of Monolayer/Bulk Seamless Contact of PtSe2
12鍾昀晏簡昭欣High Accuracy Deep Neural Networks Using Contralateral-Gated Analog Synapse Composed of Ultra-thin MoS2 nFET and Nonvolatile Charge-Trap Memory
13陳福祥林俊良Defect induced mobility change in MoS2 FET
14劉卉庭林俊良Visualization of Metal Electrodes grown on 2D materials
15吳承鴻吳添立Evaluation of Scaling Zr-doped HfO2 ferroelectric MOSCAPs
17施伯政陳冠能Location-Controlled-Grain Technique with Novel Cooling Hole Structure for Monolithic 3D BEOL FinFET Circuits
18潘昱銘陳冠能Simulation & thermal analysis of location-controlled-grain Ge technique for monolithic 3D IC

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